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Ce2NdSi

Alexandria ALEX

Alex-ID: agm003617153 · 空间群: Cmcm (#63)

基础信息

化学式
Ce2NdSi
Alex-ID
agm003617153
元素数
3
位点数
8
空间群
Cmcm (#63)
晶系
orthorhombic
体积
220.19
ų
晶胞参数 a
3.9639
Å
晶胞参数 b
5.9446
Å
晶胞参数 c
9.9113
Å
α 角
90.00
°
β 角
90.00
°
γ 角
109.48
°

组成

元素组成(原子分数)
组成信息
化学式
Ce2NdSi
Ce
4.00 · 50.0%
Nd
2.00 · 25.0%
Si
2.00 · 25.0%

能量与稳定性

凸包上方能量
0.0829
eV/atom
形成能
-0.3281
eV/atom
校正后总能量
-46.7512
eV
原始总能量
-46.7511
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0001
eV
费米能级态密度
18.3656
总磁矩
0.3215
μB

其他信息

原型 ID

ABC2_63_spg63

分解产物

CeNdSi Ce

计算时间

2022-04-15 03:04:47.200229

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003617153).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm003617153
data_agm003617153
_cell_length_a     3.96388
_cell_length_b     5.94465
_cell_length_c     9.91131
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  109.47524
_cell_volume       220.18670
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ce1 Ce 0.33261 0.66522 0.96915 1.00000
  Ce2 Ce 0.66739 0.33478 0.03085 1.00000
  Ce3 Ce 0.66739 0.33478 0.46915 1.00000
  Ce4 Ce 0.33261 0.66522 0.53085 1.00000
  Nd1 Nd 0.95247 0.90493 0.25000 1.00000
  Nd2 Nd 0.04753 0.09507 0.75000 1.00000
  Si1 Si 0.24131 0.48262 0.25000 1.00000
  Si2 Si 0.75869 0.51738 0.75000 1.00000
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