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Th8GeC4S3

Alexandria ALEX

Alex-ID: agm004711368 · 空间群: R-3m (#166)

Alexandria Database API

基础信息

化学式
Th8GeC4S3
Alex-ID
agm004711368
元素数
4
位点数
16
空间群
R-3m (#166)
晶系
trigonal
体积
352.11
ų
晶胞参数 a
7.7706
Å
晶胞参数 b
8.0917
Å
晶胞参数 c
7.7705
Å
α 角
118.70
°
β 角
120.00
°
γ 角
90.00
°

组成

元素组成（原子分数）
组成信息
化学式
Th8GeC4S3
Th
8.00 · 50.0%
Ge
1.00 · 6.3%
C
4.00 · 25.0%
S
3.00 · 18.8%

能量与稳定性

凸包上方能量
0.0222
eV/atom
形成能
-1.1388
eV/atom
校正后总能量
-131.4946
eV
原始总能量
-129.5042
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0153
eV
费米能级态密度
7.8100
总磁矩
0.0000
μB

其他信息

原型 ID

AB3C4D8_70_spg166

分解产物

Th5Ge3C Th2CS ThC2

计算时间

2023-02-03 07:16:44.537486

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004711368).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm004711368
data_agm004711368
_cell_length_a     7.77062
_cell_length_b     8.09170
_cell_length_c     7.77052
_cell_angle_alpha  118.70152
_cell_angle_beta   119.99847
_cell_angle_gamma  90.00255
_cell_volume       352.11238
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.26328 0.78778 0.02446 1.00000
  Th2 Th 0.26330 0.78777 0.52660 1.00000
  Th3 Th 0.23728 0.21178 0.47457 1.00000
  Th4 Th 0.76117 0.78778 0.02445 1.00000
  Th5 Th 0.23883 0.21222 0.97555 1.00000
  Th6 Th 0.76272 0.78822 0.52543 1.00000
  Th7 Th 0.73670 0.21223 0.47340 1.00000
  Th8 Th 0.73672 0.21222 0.97554 1.00000
  Ge1 Ge 0.00000 0.50000 0.00000 1.00000
  C1 C 0.50000 0.00000 0.00000 1.00000
  C2 C 0.50000 0.00000 0.50000 1.00000
  C3 C 0.00000 0.00000 0.00000 1.00000
  C4 C 0.00000 0.00000 0.50000 1.00000
  S1 S 0.50000 0.50000 0.00000 1.00000
  S2 S 0.50000 0.50000 0.50000 1.00000
  S3 S 0.00000 0.50000 0.50000 1.00000
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