Pr(SiTc2)2
高熵材料 HEA 传统材料 TRAMP-ID: mp-3249469 · 空间群: Cmmm (#65)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 12.80 | 6.9185 | 29.7 | (1,-1,0) |
| 21.52 | 4.1300 | 2.7 | (0,0,1) |
| 22.44 | 3.9628 | 7.0 | (1,0,0) |
| 25.11 | 3.5462 | 6.9 | (1,-1,1) |
| 25.75 | 3.4592 | 8.1 | (2,-2,0) |
| 29.00 | 3.0793 | 8.1 | (2,-1,0) |
| 31.28 | 2.8594 | 1.8 | (1,0,1) |
| 33.80 | 2.6519 | 11.0 | (2,-2,1) |
| 36.39 | 2.4687 | 100.0 | (2,-1,1) |
| 39.06 | 2.3062 | 7.3 | (3,-3,0) |
| 39.17 | 2.3000 | 3.3 | (3,-2,0) |
| 39.17 | 2.3000 | 3.3 | (2,-3,0) |
| 43.77 | 2.0680 | 23.1 | (1,1,0) |
| 43.84 | 2.0650 | 23.0 | (0,0,2) |
| 45.02 | 2.0135 | 3.2 | (3,-3,1) |
| 45.12 | 2.0094 | 22.1 | (3,-2,1) |
| 45.79 | 1.9814 | 1.1 | (2,0,0) |
| 45.79 | 1.9814 | 1.1 | (0,2,0) |
| 45.86 | 1.9787 | 2.3 | (1,-1,2) |
| 49.79 | 1.8313 | 1.8 | (1,0,2) |
| 51.13 | 1.7865 | 1.0 | (2,0,1) |
| 51.13 | 1.7865 | 1.0 | (0,2,1) |
| 51.22 | 1.7835 | 3.5 | (4,-3,0) |
| 51.48 | 1.7750 | 1.2 | (3,-1,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
组成概览
高熵合金特征
传统材料特征
关联任务
引用参考
The crystal structure and related material properties of Pr(SiTc2)2 were obtained from the Materials Project database (MP-ID: mp-3249469, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Pr(SiTc2)2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.22093455
_cell_length_b 7.22093386
_cell_length_c 4.12997202
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 146.71545252
_symmetry_Int_Tables_number 1
_chemical_formula_structural Pr(SiTc2)2
_chemical_formula_sum 'Pr1 Si2 Tc4'
_cell_volume 118.18052543
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Pr Pr0 1 0.00000000 0.00000000 0.00000000 1.0
Si Si1 1 0.59208882 0.40791118 0.50000000 1.0
Si Si2 1 0.40791118 0.59208882 0.50000000 1.0
Tc Tc3 1 0.80772134 0.19227866 0.50000000 1.0
Tc Tc4 1 0.19227866 0.80772134 0.50000000 1.0
Tc Tc5 1 0.69693028 0.30306972 0.00000000 1.0
Tc Tc6 1 0.30306972 0.69693028 0.00000000 1.0
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