Th3SiAs2
高熵材料 HEA 传统材料 TRAMP-ID: mp-3251641 · 空间群: Immm (#71)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 25.56 | 3.4846 | 22.8 | (1,2,-2) |
| 25.56 | 3.4846 | 22.8 | (2,1,-1) |
| 25.61 | 3.4784 | 45.6 | (1,-1,0) |
| 29.21 | 3.0573 | 1.4 | (1,1,-2) |
| 29.60 | 3.0177 | 100.0 | (2,1,-2) |
| 29.68 | 3.0098 | 49.8 | (1,-1,1) |
| 42.30 | 2.1367 | 19.1 | (3,3,-3) |
| 42.42 | 2.1310 | 76.3 | (1,2,-3) |
| 42.42 | 2.1310 | 19.1 | (1,-1,-1) |
| 50.10 | 1.8206 | 3.9 | (3,3,-4) |
| 50.10 | 1.8206 | 11.7 | (4,2,-3) |
| 50.18 | 1.8180 | 15.7 | (2,1,-3) |
| 50.23 | 1.8163 | 7.8 | (0,3,-3) |
| 50.26 | 1.8154 | 7.9 | (2,-2,1) |
| 52.52 | 1.7423 | 20.5 | (2,4,-4) |
| 52.62 | 1.7392 | 20.6 | (2,-2,0) |
| 61.45 | 1.5089 | 6.4 | (4,2,-4) |
| 61.45 | 1.5089 | 6.4 | (2,4,-2) |
| 61.63 | 1.5049 | 6.4 | (2,-2,2) |
| 67.58 | 1.3862 | 3.2 | (4,5,-5) |
| 67.73 | 1.3835 | 1.6 | (2,4,-5) |
| 67.73 | 1.3835 | 4.9 | (1,5,-4) |
| 67.77 | 1.3827 | 3.3 | (2,-2,-1) |
| 67.79 | 1.3823 | 6.6 | (1,2,-4) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
组成概览
高熵合金特征
传统材料特征
关联任务
引用参考
The crystal structure and related material properties of Th3SiAs2 were obtained from the Materials Project database (MP-ID: mp-3251641, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th3SiAs2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.39522070
_cell_length_b 7.39522068
_cell_length_c 7.39522092
_cell_angle_alpha 146.50422783
_cell_angle_beta 131.96838496
_cell_angle_gamma 59.82472276
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th3SiAs2
_chemical_formula_sum 'Th3 Si1 As2'
_cell_volume 164.45395847
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.00000000 0.00000000 0.00000000 1.0
Th Th1 1 0.66255322 0.66255322 0.00000000 1.0
Th Th2 1 0.33744678 0.33744678 1.00000000 1.0
Si Si3 1 0.50000000 0.00000000 0.50000000 1.0
As As4 1 0.16757671 0.66757671 0.50000000 1.0
As As5 1 0.83242329 0.33242329 0.50000000 1.0
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