SiGe
弹性数据 ELAMP-ID: mp-978534 · 空间群: P6_3mc (#186)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 26.36 | 3.3814 | 73.4 | (1,0,-1,0) |
| 26.36 | 3.3814 | 36.7 | (1,-1,0,0) |
| 27.66 | 3.2254 | 76.7 | (0,0,0,2) |
| 29.83 | 2.9949 | 100.0 | (1,0,-1,1) |
| 29.83 | 2.9949 | 50.0 | (1,-1,0,1) |
| 38.58 | 2.3339 | 31.1 | (1,0,-1,2) |
| 38.58 | 2.3339 | 15.5 | (1,-1,0,2) |
| 46.52 | 1.9522 | 30.0 | (1,1,-2,0) |
| 46.52 | 1.9522 | 60.0 | (2,-1,-1,0) |
| 50.29 | 1.8145 | 94.8 | (1,0,-1,3) |
| 54.26 | 1.6907 | 9.4 | (2,0,-2,0) |
| 54.26 | 1.6907 | 4.7 | (2,-2,0,0) |
| 54.98 | 1.6701 | 21.7 | (1,1,-2,2) |
| 54.98 | 1.6701 | 43.4 | (2,-1,-1,2) |
| 56.25 | 1.6354 | 16.5 | (2,0,-2,1) |
| 56.25 | 1.6354 | 8.3 | (2,-2,0,1) |
| 57.11 | 1.6127 | 3.4 | (0,0,0,4) |
| 61.97 | 1.4974 | 7.5 | (2,0,-2,2) |
| 61.97 | 1.4974 | 3.8 | (2,-2,0,2) |
| 63.96 | 1.4556 | 3.5 | (1,0,-1,4) |
| 70.91 | 1.3291 | 22.2 | (2,0,-2,3) |
| 70.91 | 1.3291 | 11.1 | (2,-2,0,3) |
| 74.20 | 1.2780 | 3.7 | (2,1,-3,0) |
| 74.20 | 1.2780 | 3.7 | (3,-1,-2,0) |
能量属性
电子属性
磁性属性
弹性属性
特征分析
组成概览
弹性数据特征
关联任务
引用参考
The crystal structure and related material properties of SiGe were obtained from the Materials Project database (MP-ID: mp-978534, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_SiGe
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 3.90445060
_cell_length_b 3.90445060
_cell_length_c 6.45078300
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99997623
_symmetry_Int_Tables_number 1
_chemical_formula_structural SiGe
_chemical_formula_sum 'Si2 Ge2'
_cell_volume 85.16536904
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Si Si0 1 0.00000000 0.00000000 0.37460700 1.0
Si Si1 1 0.33333400 0.66666600 0.87460800 1.0
Ge Ge2 1 0.00000000 0.00000000 0.00039200 1.0
Ge Ge3 1 0.33333400 0.66666600 0.50039200 1.0
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