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ThGa2Si

Alexandria ALEX

Alex-ID: agm001985658 · Space group: R-3m (#166)

Basic Information

Formula
ThGa2Si
Alex-ID
agm001985658
Elements
3
Sites
4
Space group
R-3m (#166)
Crystal system
trigonal
Volume
84.10
ų
Cell a
4.3926
Å
Cell b
4.3926
Å
Cell c
5.6358
Å
α angle
67.06
°
β angle
67.06
°
γ angle
60.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
ThGa2Si
Si
1.00 · 25.0%
Ga
2.00 · 50.0%
Th
1.00 · 25.0%

Energy & Stability

Energy above hull
0.2703
eV/atom
Formation energy
-0.2347
eV/atom
Corrected total energy
-19.8429
eV
Raw total energy
-19.8429
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
1.7357
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2_9_spg160

Decomposition

ThSi2 ThGa3 Si

Computed at

2022-07-17 16:08:31

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm001985658).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm001985658
data_agm001985658
_cell_length_a     4.39257
_cell_length_b     4.39257
_cell_length_c     5.63579
_cell_angle_alpha  67.06396
_cell_angle_beta   67.06396
_cell_angle_gamma  60.00000
_cell_volume       84.09891
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.00000 0.00000 0.00000 1.00000
  Ga1 Ga 0.71342 0.71342 0.85975 1.00000
  Ga2 Ga 0.28658 0.28658 0.14025 1.00000
  Th1 Th 0.50000 0.50000 0.50000 1.00000
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