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ThBS2

Alexandria ALEX

Alex-ID: agm002000422 · 空间群: R-3m (#166)

基础信息

化学式
ThBS2
Alex-ID
agm002000422
元素数
3
位点数
4
空间群
R-3m (#166)
晶系
trigonal
体积
73.79
ų
晶胞参数 a
3.2724
Å
晶胞参数 b
3.2724
Å
晶胞参数 c
8.1786
Å
α 角
78.46
°
β 角
78.46
°
γ 角
60.00
°

组成

元素组成(原子分数)
组成信息
化学式
ThBS2
S
2.00 · 50.0%
B
1.00 · 25.0%
Th
1.00 · 25.0%

能量与稳定性

凸包上方能量
1.6768
eV/atom
形成能
-0.1676
eV/atom
校正后总能量
-23.0250
eV
原始总能量
-21.6981
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0044
eV
费米能级态密度
3.6912
总磁矩
0.2305
μB

其他信息

原型 ID

ABC2_83_spg166

分解产物

ThS2 B

计算时间

2022-05-10 06:59:13

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm002000422).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm002000422
data_agm002000422
_cell_length_a     3.27235
_cell_length_b     3.27235
_cell_length_c     8.17863
_cell_angle_alpha  78.45983
_cell_angle_beta   78.45983
_cell_angle_gamma  60.00000
_cell_volume       73.79438
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  S1 S 0.11803 0.11803 0.64591 1.00000
  S2 S 0.88197 0.88197 0.35409 1.00000
  B1 B 0.50000 0.50000 0.50000 1.00000
  Th1 Th 0.00000 0.00000 0.00000 1.00000
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