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VGa2Ni

Alexandria ALEX

Alex-ID: agm002192191 · 空间群: I4mm (#107)

基础信息

化学式
VGa2Ni
Alex-ID
agm002192191
元素数
3
位点数
40
空间群
I4mm (#107)
晶系
tetragonal
体积
553.27
ų
晶胞参数 a
7.9043
Å
晶胞参数 b
9.2529
Å
晶胞参数 c
9.2529
Å
α 角
79.49
°
β 角
64.71
°
γ 角
64.71
°

组成

元素组成(原子分数)
组成信息
化学式
VGa2Ni
Ni
10.00 · 25.0%
Ga
20.00 · 50.0%
V
10.00 · 25.0%

能量与稳定性

凸包上方能量
0.1271
eV/atom
形成能
-0.2039
eV/atom
校正后总能量
-217.7665
eV
原始总能量
-217.7665
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0035
eV
费米能级态密度
17.0400
总磁矩
14.2290
μB

其他信息

原型 ID

ABC2_200_spg107

分解产物

V2Ga Ga3Ni2

计算时间

2018-05-27 14:19:49

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm002192191).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm002192191
data_agm002192191
_cell_length_a     7.90429
_cell_length_b     9.25288
_cell_length_c     9.25288
_cell_angle_alpha  79.48960
_cell_angle_beta   64.71414
_cell_angle_gamma  64.71414
_cell_volume       553.26593
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ni1 Ni 0.85741 0.32312 0.99998 1.00000
  Ni2 Ni 0.10633 0.49997 0.49997 1.00000
  Ni3 Ni 0.60631 0.50000 0.50000 1.00000
  Ni4 Ni 0.18056 0.67686 0.00002 1.00000
  Ni5 Ni 0.85741 0.99998 0.32312 1.00000
  Ni6 Ni 0.18056 0.00002 0.67686 1.00000
  Ni7 Ni 0.30025 0.21244 0.21244 1.00000
  Ni8 Ni 0.51265 0.21243 0.78756 1.00000
  Ni9 Ni 0.51265 0.78756 0.21243 1.00000
  Ni10 Ni 0.72501 0.78758 0.78758 1.00000
  Ga1 Ga 0.20599 0.16187 0.83816 1.00000
  Ga2 Ga 0.04402 0.16189 0.16189 1.00000
  Ga3 Ga 0.73829 0.61664 0.61664 1.00000
  Ga4 Ga 0.35487 0.61669 0.38338 1.00000
  Ga5 Ga 0.84549 0.75018 0.99999 1.00000
  Ga6 Ga 0.35487 0.38338 0.61669 1.00000
  Ga7 Ga 0.97155 0.38331 0.38331 1.00000
  Ga8 Ga 0.59570 0.24978 0.99998 1.00000
  Ga9 Ga 0.84549 0.99999 0.75018 1.00000
  Ga10 Ga 0.59570 0.99998 0.24978 1.00000
  Ga11 Ga 0.96152 0.79915 0.50694 1.00000
  Ga12 Ga 0.76063 0.50694 0.20082 1.00000
  Ga13 Ga 0.46849 0.49306 0.79917 1.00000
  Ga14 Ga 0.26765 0.20085 0.49307 1.00000
  Ga15 Ga 0.46849 0.79917 0.49306 1.00000
  Ga16 Ga 0.76063 0.20082 0.50694 1.00000
  Ga17 Ga 0.96152 0.50694 0.79915 1.00000
  Ga18 Ga 0.26765 0.49307 0.20085 1.00000
  Ga19 Ga 0.36776 0.83813 0.83813 1.00000
  Ga20 Ga 0.20599 0.83816 0.16187 1.00000
  V1 V 0.47002 0.00002 0.00002 1.00000
  V2 V 0.95197 0.99999 0.99999 1.00000
  V3 V 0.56637 0.59545 0.99995 1.00000
  V4 V 0.16176 0.00005 0.40459 1.00000
  V5 V 0.56637 0.99995 0.59545 1.00000
  V6 V 0.16176 0.40459 0.00005 1.00000
  V7 V 0.57961 0.28877 0.28877 1.00000
  V8 V 0.86840 0.28876 0.71121 1.00000
  V9 V 0.86840 0.71121 0.28876 1.00000
  V10 V 0.15715 0.71124 0.71124 1.00000
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