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ErGaAg

Alexandria ALEX

Alex-ID: agm002275366 · 空间群: Pnma (#62)

基础信息

化学式
ErGaAg
Alex-ID
agm002275366
元素数
3
位点数
12
空间群
Pnma (#62)
晶系
orthorhombic
体积
250.61
ų
晶胞参数 a
4.5467
Å
晶胞参数 b
7.0683
Å
晶胞参数 c
7.7980
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
ErGaAg
Ga
4.00 · 33.3%
Ag
4.00 · 33.3%
Er
4.00 · 33.3%

能量与稳定性

凸包上方能量
0.0235
eV/atom
形成能
-0.4760
eV/atom
校正后总能量
-47.4860
eV
原始总能量
-47.4860
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
7.2997
总磁矩
0.0000
μB

其他信息

原型 ID

ABC_6_spg62

分解产物

ErGaAg

计算时间

2018-11-03 21:38:31

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm002275366).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm002275366
data_agm002275366
_cell_length_a     4.54672
_cell_length_b     7.06832
_cell_length_c     7.79800
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       250.60955
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.25000 0.20865 0.08686 1.00000
  Ga2 Ga 0.75000 0.29135 0.58686 1.00000
  Ga3 Ga 0.25000 0.70865 0.41314 1.00000
  Ga4 Ga 0.75000 0.79135 0.91314 1.00000
  Ag1 Ag 0.25000 0.79201 0.08249 1.00000
  Ag2 Ag 0.75000 0.20799 0.91751 1.00000
  Ag3 Ag 0.25000 0.29201 0.41751 1.00000
  Ag4 Ag 0.75000 0.70799 0.58249 1.00000
  Er1 Er 0.75000 0.49885 0.21767 1.00000
  Er2 Er 0.25000 0.00115 0.71767 1.00000
  Er3 Er 0.75000 0.99885 0.28233 1.00000
  Er4 Er 0.25000 0.50115 0.78233 1.00000
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