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Nb2GaSn

Alexandria ALEX

Alex-ID: agm002832012 · 空间群: I-42d (#122)

基础信息

化学式
Nb2GaSn
Alex-ID
agm002832012
元素数
3
位点数
8
空间群
I-42d (#122)
晶系
tetragonal
体积
161.53
ų
晶胞参数 a
4.0004
Å
晶胞参数 b
4.0004
Å
晶胞参数 c
10.4820
Å
α 角
79.00
°
β 角
79.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Nb2GaSn
Nb
4.00 · 50.0%
Sn
2.00 · 25.0%
Ga
2.00 · 25.0%

能量与稳定性

凸包上方能量
0.5419
eV/atom
形成能
0.2516
eV/atom
校正后总能量
-52.3308
eV
原始总能量
-52.3308
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
7.9688
总磁矩
0.0000
μB

其他信息

原型 ID

ABC2_234_spg122

分解产物

Nb3Ga2 NbSn2

计算时间

2016-12-30 21:22:56

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm002832012).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm002832012
data_agm002832012
_cell_length_a     4.00044
_cell_length_b     4.00044
_cell_length_c     10.48202
_cell_angle_alpha  78.99913
_cell_angle_beta   78.99913
_cell_angle_gamma  90.00000
_cell_volume       161.52546
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Nb1 Nb 0.61817 0.12500 0.25000 1.00000
  Nb2 Nb 0.13183 0.62500 0.25000 1.00000
  Nb3 Nb 0.37500 0.38183 0.75000 1.00000
  Nb4 Nb 0.87500 0.86817 0.75000 1.00000
  Sn1 Sn 0.00000 0.00000 0.00000 1.00000
  Sn2 Sn 0.75000 0.25000 0.50000 1.00000
  Ga1 Ga 0.50000 0.50000 0.00000 1.00000
  Ga2 Ga 0.25000 0.75000 0.50000 1.00000
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