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TaGaTe2

Alexandria ALEX

Alex-ID: agm002832550 · 空间群: I-42d (#122)

基础信息

化学式
TaGaTe2
Alex-ID
agm002832550
元素数
3
位点数
8
空间群
I-42d (#122)
晶系
tetragonal
体积
289.49
ų
晶胞参数 a
6.9782
Å
晶胞参数 b
6.9782
Å
晶胞参数 c
7.7259
Å
α 角
63.15
°
β 角
63.15
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
TaGaTe2
Te
4.00 · 50.0%
Ga
2.00 · 25.0%
Ta
2.00 · 25.0%

能量与稳定性

凸包上方能量
0.6540
eV/atom
形成能
0.2979
eV/atom
校正后总能量
-39.9477
eV
原始总能量
-39.9477
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
2.8871
总磁矩
3.9437
μB

其他信息

原型 ID

ABC2_7_spg122

分解产物

GaTe Ta2Te3 Ta3Ga2

计算时间

2015-03-27 17:18:08

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm002832550).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm002832550
data_agm002832550
_cell_length_a     6.97820
_cell_length_b     6.97820
_cell_length_c     7.72588
_cell_angle_alpha  63.15286
_cell_angle_beta   63.15286
_cell_angle_gamma  90.00000
_cell_volume       289.48715
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Te1 Te 0.66679 0.12500 0.25000 1.00000
  Te2 Te 0.08321 0.62500 0.25000 1.00000
  Te3 Te 0.37500 0.33321 0.75000 1.00000
  Te4 Te 0.87500 0.91679 0.75000 1.00000
  Ga1 Ga 0.50000 0.50000 0.00000 1.00000
  Ga2 Ga 0.25000 0.75000 0.50000 1.00000
  Ta1 Ta 0.00000 0.00000 0.00000 1.00000
  Ta2 Ta 0.75000 0.25000 0.50000 1.00000
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