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V2SnSe

Alexandria ALEX

Alex-ID: agm002900599 · 空间群: I-42d (#122)

基础信息

化学式
V2SnSe
Alex-ID
agm002900599
元素数
3
位点数
8
空间群
I-42d (#122)
晶系
tetragonal
体积
159.79
ų
晶胞参数 a
7.1721
Å
晶胞参数 b
7.1721
Å
晶胞参数 c
5.9472
Å
α 角
52.92
°
β 角
52.92
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
V2SnSe
Sn
2.00 · 25.0%
Se
2.00 · 25.0%
V
4.00 · 50.0%

能量与稳定性

凸包上方能量
0.6265
eV/atom
形成能
0.2475
eV/atom
校正后总能量
-49.4814
eV
原始总能量
-49.4814
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
8.8426
总磁矩
9.3106
μB

其他信息

原型 ID

ABC2_1068_spg122

分解产物

VSn2 V3Sn V9Se8

计算时间

2020-06-27 11:12:44

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm002900599).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm002900599
data_agm002900599
_cell_length_a     7.17212
_cell_length_b     7.17212
_cell_length_c     5.94725
_cell_angle_alpha  52.91650
_cell_angle_beta   52.91650
_cell_angle_gamma  90.00000
_cell_volume       159.79433
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sn1 Sn 0.00000 0.00000 0.00000 1.00000
  Sn2 Sn 0.75000 0.25000 0.50000 1.00000
  Se1 Se 0.50000 0.50000 0.00000 1.00000
  Se2 Se 0.25000 0.75000 0.50000 1.00000
  V1 V 0.57420 0.12500 0.25000 1.00000
  V2 V 0.17580 0.62500 0.25000 1.00000
  V3 V 0.37500 0.42580 0.75000 1.00000
  V4 V 0.87500 0.82420 0.75000 1.00000
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