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Si(HgC)2

Alexandria ALEX

Alex-ID: agm002964372 · 空间群: P4/mbm (#127)

基础信息

化学式
Si(HgC)2
Alex-ID
agm002964372
元素数
3
位点数
10
空间群
P4/mbm (#127)
晶系
tetragonal
体积
166.26
ų
晶胞参数 a
5.3575
Å
晶胞参数 b
5.3575
Å
晶胞参数 c
5.7926
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Si(HgC)2
C
4.00 · 40.0%
Si
2.00 · 20.0%
Hg
4.00 · 40.0%

能量与稳定性

凸包上方能量
1.5513
eV/atom
形成能
1.4688
eV/atom
校正后总能量
-34.4974
eV
原始总能量
-34.4974
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0002
eV
费米能级态密度
3.4775
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C2_595_spg127

分解产物

C Hg SiC

计算时间

2016-12-02 03:34:21

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm002964372).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm002964372
data_agm002964372
_cell_length_a     5.35749
_cell_length_b     5.35749
_cell_length_c     5.79256
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       166.26234
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  C1 C 0.24643 0.74643 0.00000 1.00000
  C2 C 0.74643 0.75357 0.00000 1.00000
  C3 C 0.75357 0.25357 0.00000 1.00000
  C4 C 0.25357 0.24643 0.00000 1.00000
  Si1 Si 0.00000 0.00000 0.00000 1.00000
  Si2 Si 0.50000 0.50000 0.00000 1.00000
  Hg1 Hg 0.18839 0.68839 0.50000 1.00000
  Hg2 Hg 0.68839 0.81161 0.50000 1.00000
  Hg3 Hg 0.81161 0.31161 0.50000 1.00000
  Hg4 Hg 0.31161 0.18839 0.50000 1.00000
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