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Si2Tc2Te

Alexandria ALEX

Alex-ID: agm003018907 · Space group: P4/mbm (#127)

Basic Information

Formula
Si2Tc2Te
Alex-ID
agm003018907
Elements
3
Sites
10
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
158.57
ų
Cell a
7.2627
Å
Cell b
7.2627
Å
Cell c
3.0063
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Si2Tc2Te
Si
4.00 · 40.0%
Te
2.00 · 20.0%
Tc
4.00 · 40.0%

Energy & Stability

Energy above hull
0.4137
eV/atom
Formation energy
-0.0526
eV/atom
Corrected total energy
-69.9654
eV
Raw total energy
-69.9654
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
8.2184
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2_3_spg127

Decomposition

SiTc Tc2Te5 Si7Tc4

Computed at

2017-04-09 08:48:17

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003018907).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm003018907
data_agm003018907
_cell_length_a     7.26266
_cell_length_b     7.26266
_cell_length_c     3.00635
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       158.57336
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.13095 0.63095 0.50000 1.00000
  Si2 Si 0.63095 0.86905 0.50000 1.00000
  Si3 Si 0.86905 0.36905 0.50000 1.00000
  Si4 Si 0.36905 0.13095 0.50000 1.00000
  Te1 Te 0.00000 0.00000 0.00000 1.00000
  Te2 Te 0.50000 0.50000 0.00000 1.00000
  Tc1 Tc 0.34560 0.84560 0.00000 1.00000
  Tc2 Tc 0.84560 0.65440 0.00000 1.00000
  Tc3 Tc 0.65440 0.15440 0.00000 1.00000
  Tc4 Tc 0.15440 0.34560 0.00000 1.00000
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