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Ga2SiRh2

Alexandria ALEX

Alex-ID: agm003019596 · Space group: P4/mbm (#127)

Alexandria Database API

Basic Information

Formula
Ga2SiRh2
Alex-ID
agm003019596
Elements
3
Sites
10
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
151.78
ų
Cell a
6.3492
Å
Cell b
6.3492
Å
Cell c
3.7651
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ga2SiRh2
Si
2.00 · 20.0%
Rh
4.00 · 40.0%
Ga
4.00 · 40.0%

Energy & Stability

Energy above hull
0.1922
eV/atom
Formation energy
-0.4687
eV/atom
Corrected total energy
-57.0563
eV
Raw total energy
-57.0563
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
4.3723
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2_3_spg127

Decomposition

Ga3Rh Ga17Rh10 SiRh

Computed at

2017-05-22 11:08:06

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003019596).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm003019596
data_agm003019596
_cell_length_a     6.34924
_cell_length_b     6.34924
_cell_length_c     3.76506
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       151.78034
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.00000 0.00000 0.00000 1.00000
  Si2 Si 0.50000 0.50000 0.00000 1.00000
  Rh1 Rh 0.33841 0.83841 0.00000 1.00000
  Rh2 Rh 0.83841 0.66159 0.00000 1.00000
  Rh3 Rh 0.66159 0.16159 0.00000 1.00000
  Rh4 Rh 0.16159 0.33841 0.00000 1.00000
  Ga1 Ga 0.14685 0.64685 0.50000 1.00000
  Ga2 Ga 0.64685 0.85315 0.50000 1.00000
  Ga3 Ga 0.85315 0.35315 0.50000 1.00000
  Ga4 Ga 0.35315 0.14685 0.50000 1.00000
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