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TlGaS2

Alexandria ALEX

Alex-ID: agm003137516 · Space group: C2/c (#15)

Basic Information

Formula
TlGaS2
Alex-ID
agm003137516
Elements
3
Sites
32
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
834.34
ų
Cell a
7.4091
Å
Cell b
7.4091
Å
Cell c
15.4269
Å
α angle
83.04
°
β angle
83.04
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
TlGaS2
Tl
8.00 · 25.0%
S
16.00 · 50.0%
Ga
8.00 · 25.0%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.9707
eV/atom
Corrected total energy
-140.2648
eV
Raw total energy
-129.6494
eV

Electronic Structure

Indirect band gap
1.8397
eV
Direct band gap
1.9466
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2_635_spg15

Decomposition

TlGaS2

Computed at

2015-03-03 13:30:14

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003137516).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm003137516
data_agm003137516
_cell_length_a     7.40910
_cell_length_b     7.40910
_cell_length_c     15.42691
_cell_angle_alpha  83.04288
_cell_angle_beta   83.04223
_cell_angle_gamma  90.00000
_cell_volume       834.33804
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tl1 Tl 0.15484 0.27734 0.88406 1.00000
  Tl2 Tl 0.72266 0.84516 0.61594 1.00000
  Tl3 Tl 0.84516 0.72266 0.11594 1.00000
  Tl4 Tl 0.27734 0.15484 0.38406 1.00000
  Tl5 Tl 0.27529 0.65192 0.39028 1.00000
  Tl6 Tl 0.34808 0.72471 0.10972 1.00000
  Tl7 Tl 0.72471 0.34808 0.60972 1.00000
  Tl8 Tl 0.65192 0.27529 0.89028 1.00000
  S1 S 0.14434 0.76931 0.92809 1.00000
  S2 S 0.23069 0.85566 0.57191 1.00000
  S3 S 0.85566 0.23069 0.07191 1.00000
  S4 S 0.76931 0.14434 0.42809 1.00000
  S5 S 0.06815 0.44451 0.24867 1.00000
  S6 S 0.55549 0.93185 0.25133 1.00000
  S7 S 0.93185 0.55549 0.75133 1.00000
  S8 S 0.44451 0.06815 0.74867 1.00000
  S9 S 0.77029 0.64315 0.42497 1.00000
  S10 S 0.35685 0.22971 0.07503 1.00000
  S11 S 0.22971 0.35685 0.57503 1.00000
  S12 S 0.93199 0.06801 0.75000 1.00000
  S13 S 0.55589 0.44411 0.25000 1.00000
  S14 S 0.44411 0.55589 0.75000 1.00000
  S15 S 0.06801 0.93199 0.25000 1.00000
  S16 S 0.64315 0.77029 0.92497 1.00000
  Ga1 Ga 0.58637 0.20899 0.16425 1.00000
  Ga2 Ga 0.79075 0.91929 0.33696 1.00000
  Ga3 Ga 0.91929 0.79075 0.83696 1.00000
  Ga4 Ga 0.20925 0.08071 0.66304 1.00000
  Ga5 Ga 0.20899 0.58637 0.66425 1.00000
  Ga6 Ga 0.41363 0.79101 0.83575 1.00000
  Ga7 Ga 0.79101 0.41363 0.33575 1.00000
  Ga8 Ga 0.08071 0.20925 0.16304 1.00000
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