Ga2Os
Alexandria ALEXAlex-ID: agm003200260 · Space group: Fddd (#70)
Basic Information
Composition
Energy & Stability
Electronic Structure
Additional Information
AB2_94_spg15
Ga3Os Os
2021-12-03 01:11:48.223233
Citation
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003200260).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
3D Crystal Structure Rendering
Loading 3D structure…
# CIF generated by HEAS from Alexandria entry agm003200260
data_agm003200260
_cell_length_a 6.05289
_cell_length_b 4.99883
_cell_length_c 4.79823
_cell_angle_alpha 76.28477
_cell_angle_beta 53.35119
_cell_angle_gamma 50.36404
_cell_volume 87.24424
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ga1 Ga 0.41768 0.08232 0.41768 1.00000
Ga2 Ga 0.08232 0.41768 0.08232 1.00000
Ga3 Ga 0.83232 0.16768 0.83232 1.00000
Ga4 Ga 0.16768 0.83232 0.16768 1.00000
Os1 Os 0.75000 0.75000 0.75000 1.00000
Os2 Os 0.50000 0.50000 0.50000 1.00000
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