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Ba2Si5N8

Alexandria ALEX

Alex-ID: agm003239409 · Space group: Pmn2_1 (#31)

Basic Information

Formula
Ba2Si5N8
Alex-ID
agm003239409
Elements
3
Sites
30
Space group
Pmn2_1 (#31)
Crystal system
orthorhombic
Volume
387.31
ų
Cell a
5.8275
Å
Cell b
7.0234
Å
Cell c
9.4630
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ba2Si5N8
Ba
4.00 · 13.3%
N
16.00 · 53.3%
Si
10.00 · 33.3%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-1.3531
eV/atom
Corrected total energy
-229.7523
eV
Raw total energy
-229.7523
eV

Electronic Structure

Indirect band gap
2.8918
eV
Direct band gap
2.8918
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B5C8_12_spg31

Decomposition

Ba2Si5N8

Computed at

2021-12-15 05:10:07.007770

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003239409).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm003239409
data_agm003239409
_cell_length_a     5.82750
_cell_length_b     7.02336
_cell_length_c     9.46302
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       387.30825
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.00000 0.85563 0.00053 1.00000
  Ba2 Ba 0.50000 0.14437 0.50053 1.00000
  Ba3 Ba 0.00000 0.87879 0.63122 1.00000
  Ba4 Ba 0.50000 0.12121 0.13122 1.00000
  N1 N 0.00000 0.19840 0.47075 1.00000
  N2 N 0.50000 0.80160 0.97075 1.00000
  N3 N 0.23826 0.90550 0.33045 1.00000
  N4 N 0.26174 0.09450 0.83045 1.00000
  N5 N 0.73826 0.09450 0.83045 1.00000
  N6 N 0.76174 0.90550 0.33045 1.00000
  N7 N 0.24672 0.44602 0.99327 1.00000
  N8 N 0.25328 0.55398 0.49327 1.00000
  N9 N 0.74672 0.55398 0.49327 1.00000
  N10 N 0.75328 0.44602 0.99327 1.00000
  N11 N 0.00000 0.57622 0.23551 1.00000
  N12 N 0.50000 0.42378 0.73551 1.00000
  N13 N 0.00000 0.17567 0.16497 1.00000
  N14 N 0.50000 0.82433 0.66497 1.00000
  N15 N 0.00000 0.41803 0.72944 1.00000
  N16 N 0.50000 0.58197 0.22944 1.00000
  Si1 Si 0.25068 0.66424 0.32090 1.00000
  Si2 Si 0.24932 0.33576 0.82090 1.00000
  Si3 Si 0.75068 0.33576 0.82090 1.00000
  Si4 Si 0.74932 0.66424 0.32090 1.00000
  Si5 Si 0.00000 0.05254 0.32247 1.00000
  Si6 Si 0.50000 0.94746 0.82247 1.00000
  Si7 Si 0.00000 0.41922 0.53931 1.00000
  Si8 Si 0.50000 0.58078 0.03931 1.00000
  Si9 Si 0.00000 0.39968 0.10361 1.00000
  Si10 Si 0.50000 0.60032 0.60361 1.00000
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