Ba2Si2O5
Alexandria ALEXAlex-ID: agm003316652 · 空间群: C2/m (#12)
基础信息
组成
能量与稳定性
电子结构
其他信息
A2B2C5_290_spg12
BaSiO3 Ba2SiO4 Si
2022-01-20 14:01:06.272634
引用参考
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003316652).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
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# CIF generated by HEAS from Alexandria entry agm003316652
data_agm003316652
_cell_length_a 3.86363
_cell_length_b 6.05661
_cell_length_c 6.29909
_cell_angle_alpha 103.97121
_cell_angle_beta 90.00000
_cell_angle_gamma 108.60000
_cell_volume 135.09382
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ba1 Ba 0.40372 0.80745 0.66056 1.00000
Ba2 Ba 0.59628 0.19255 0.33944 1.00000
Si1 Si 0.15557 0.31113 0.94407 1.00000
Si2 Si 0.84443 0.68887 0.05593 1.00000
O1 O 0.31842 0.63684 0.01856 1.00000
O2 O 0.68158 0.36316 0.98144 1.00000
O3 O 0.11715 0.23431 0.67179 1.00000
O4 O 0.88285 0.76569 0.32821 1.00000
O5 O 0.00000 0.00000 0.00000 1.00000
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