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Rb3Ga2Sb5

Alexandria ALEX

Alex-ID: agm003344482 · Space group: Ibam (#72)

Basic Information

Formula
Rb3Ga2Sb5
Alex-ID
agm003344482
Elements
3
Sites
20
Space group
Ibam (#72)
Crystal system
orthorhombic
Volume
714.00
ų
Cell a
7.9417
Å
Cell b
10.8590
Å
Cell c
10.8590
Å
α angle
56.98
°
β angle
68.55
°
γ angle
68.55
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Rb3Ga2Sb5
Rb
6.00 · 30.0%
Ga
4.00 · 20.0%
Sb
10.00 · 50.0%

Energy & Stability

Energy above hull
0.2255
eV/atom
Formation energy
-0.1251
eV/atom
Corrected total energy
-61.6489
eV
Raw total energy
-61.6489
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0417
eV
DOS at Fermi level
5.4440
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C5_130_spg72

Decomposition

RbGaSb2 RbSb

Computed at

2022-02-04 16:32:12.916323

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003344482).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm003344482
data_agm003344482
_cell_length_a     7.94174
_cell_length_b     10.85897
_cell_length_c     10.85897
_cell_angle_alpha  56.97738
_cell_angle_beta   68.55081
_cell_angle_gamma  68.55079
_cell_volume       714.00111
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.25000 0.00000 0.00000 1.00000
  Rb2 Rb 0.75000 0.00000 0.00000 1.00000
  Rb3 Rb 0.35849 0.40054 0.88248 1.00000
  Rb4 Rb 0.64151 0.59946 0.11752 1.00000
  Rb5 Rb 0.85849 0.88248 0.40054 1.00000
  Rb6 Rb 0.14151 0.11752 0.59946 1.00000
  Ga1 Ga 0.14748 0.74579 0.95925 1.00000
  Ga2 Ga 0.85252 0.25421 0.04075 1.00000
  Ga3 Ga 0.64748 0.95925 0.74579 1.00000
  Ga4 Ga 0.35252 0.04075 0.25421 1.00000
  Sb1 Sb 0.25000 0.50000 0.50000 1.00000
  Sb2 Sb 0.75000 0.50000 0.50000 1.00000
  Sb3 Sb 0.49555 0.75445 0.75445 1.00000
  Sb4 Sb 0.00445 0.24555 0.24555 1.00000
  Sb5 Sb 0.50445 0.24555 0.24555 1.00000
  Sb6 Sb 0.99555 0.75445 0.75445 1.00000
  Sb7 Sb 0.13118 0.47674 0.26091 1.00000
  Sb8 Sb 0.86882 0.52326 0.73909 1.00000
  Sb9 Sb 0.63118 0.26091 0.47674 1.00000
  Sb10 Sb 0.36882 0.73909 0.52326 1.00000
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