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Dy2Si3Ir

Alexandria ALEX

Alex-ID: agm003427874 · 空间群: Fmmm (#69)

Alexandria Database API

基础信息

化学式
Dy2Si3Ir
Alex-ID
agm003427874
元素数
3
位点数
12
空间群
Fmmm (#69)
晶系
orthorhombic
体积
232.37
ų
晶胞参数 a
5.7388
Å
晶胞参数 b
5.7388
Å
晶胞参数 c
8.1503
Å
α 角
110.84
°
β 角
110.84
°
γ 角
89.40
°

组成

元素组成（原子分数）
组成信息
化学式
Dy2Si3Ir
Dy
4.00 · 33.3%
Si
6.00 · 50.0%
Ir
2.00 · 16.7%

能量与稳定性

凸包上方能量
0.0000
eV/atom
形成能
-0.9163
eV/atom
校正后总能量
-79.6705
eV
原始总能量
-79.6705
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0483
eV
费米能级态密度
3.6685
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C3_132_spg69

分解产物

Dy2Si3Ir

计算时间

2022-02-14 15:26:18.583421

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003427874).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm003427874
data_agm003427874
_cell_length_a     5.73879
_cell_length_b     5.73879
_cell_length_c     8.15031
_cell_angle_alpha  110.83858
_cell_angle_beta   110.83858
_cell_angle_gamma  89.40160
_cell_volume       232.37112
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Dy1 Dy 0.75000 0.25000 0.50000 1.00000
  Dy2 Dy 0.74731 0.25269 0.00000 1.00000
  Dy3 Dy 0.25000 0.75000 0.50000 1.00000
  Dy4 Dy 0.25269 0.74731 0.00000 1.00000
  Si1 Si 0.83442 0.83442 0.16706 1.00000
  Si2 Si 0.66736 0.66736 0.83294 1.00000
  Si3 Si 0.16558 0.16558 0.83294 1.00000
  Si4 Si 0.33264 0.33264 0.16706 1.00000
  Si5 Si 0.16705 0.16705 0.33410 1.00000
  Si6 Si 0.83295 0.83295 0.66590 1.00000
  Ir1 Ir 0.66616 0.66616 0.33232 1.00000
  Ir2 Ir 0.33384 0.33384 0.66768 1.00000
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