Hf8SiSb2

Alexandria ALEX

Alex-ID: agm003527331 · 空间群: C2/m (#12)

Alexandria Database API

基础信息

化学式

Hf8SiSb2

Alex-ID

agm003527331

元素数

位点数

空间群

C2/m (#12)

晶系

monoclinic

体积

241.93

Å³

晶胞参数 a

3.8165

晶胞参数 b

7.6537

晶胞参数 c

8.5053

α 角

92.16

β 角

102.97

γ 角

90.00

组成

元素组成（原子分数）

组成信息

化学式

Hf8SiSb2

8.00 · 72.7%

1.00 · 9.1%

2.00 · 18.2%

能量与稳定性

凸包上方能量

0.1486

eV/atom

形成能

-0.3269

eV/atom

校正后总能量

-96.8912

原始总能量

-96.8912

电子结构

间接带隙

0.0000

直接带隙

0.0083

费米能级态密度

8.1233

总磁矩

0.0000

μB

其他信息

原型 ID

AB2C8_774_spg12

分解产物

Hf3Sb Hf2Si

计算时间

2022-03-17 18:16:54.057056

引用参考

Alexandria 官方页面

https://alexandria.icams.rub.de/

参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003527331).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX

@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

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样式: Ball & Stick | 拖拽旋转 · 滚轮缩放 · 右键平移

原始 CIF 数据

# CIF generated by HEAS from Alexandria entry agm003527331
data_agm003527331
_cell_length_a     3.81651
_cell_length_b     7.65368
_cell_length_c     8.50534
_cell_angle_alpha  92.16137
_cell_angle_beta   102.96524
_cell_angle_gamma  90.00000
_cell_volume       241.92936
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Hf1 Hf 0.41219 0.47896 0.82437 1.00000
  Hf2 Hf 0.65960 0.04539 0.31920 1.00000
  Hf3 Hf 0.79556 0.64029 0.59112 1.00000
  Hf4 Hf 0.02056 0.23893 0.04111 1.00000
  Hf5 Hf 0.20444 0.35971 0.40888 1.00000
  Hf6 Hf 0.34040 0.95461 0.68080 1.00000
  Hf7 Hf 0.58781 0.52104 0.17563 1.00000
  Hf8 Hf 0.97944 0.76107 0.95889 1.00000
  Si1 Si 0.50000 0.00000 0.00000 1.00000
  Sb1 Sb 0.82562 0.24170 0.65125 1.00000
  Sb2 Sb 0.17438 0.75830 0.34875 1.00000

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