导航

HEAS Data Platform · 材料科学计算数据库

Hf8Ga2Tc

Alexandria ALEX

Alex-ID: agm003530997 · 空间群: C2/m (#12)

基础信息

化学式
Hf8Ga2Tc
Alex-ID
agm003530997
元素数
3
位点数
11
空间群
C2/m (#12)
晶系
monoclinic
体积
224.40
ų
晶胞参数 a
4.3264
Å
晶胞参数 b
7.0085
Å
晶胞参数 c
8.0705
Å
α 角
107.18
°
β 角
105.55
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Hf8Ga2Tc
Hf
8.00 · 72.7%
Ga
2.00 · 18.2%
Tc
1.00 · 9.1%

能量与稳定性

凸包上方能量
0.1343
eV/atom
形成能
-0.1866
eV/atom
校正后总能量
-98.1048
eV
原始总能量
-98.1048
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
7.7553
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C8_277_spg12

分解产物

Hf4Tc Hf2Ga

计算时间

2022-03-15 07:35:40.807185

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003530997).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm003530997
data_agm003530997
_cell_length_a     4.32641
_cell_length_b     7.00853
_cell_length_c     8.07047
_cell_angle_alpha  107.18487
_cell_angle_beta   105.54763
_cell_angle_gamma  90.00000
_cell_volume       224.39599
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Hf1 Hf 0.40626 0.53421 0.81253 1.00000
  Hf2 Hf 0.67115 0.93292 0.34230 1.00000
  Hf3 Hf 0.82160 0.73721 0.64321 1.00000
  Hf4 Hf 0.97310 0.21040 0.94619 1.00000
  Hf5 Hf 0.17840 0.26279 0.35679 1.00000
  Hf6 Hf 0.32885 0.06708 0.65770 1.00000
  Hf7 Hf 0.59374 0.46579 0.18747 1.00000
  Hf8 Hf 0.02691 0.78960 0.05381 1.00000
  Ga1 Ga 0.80011 0.31884 0.60023 1.00000
  Ga2 Ga 0.19989 0.68116 0.39977 1.00000
  Tc1 Tc 0.50000 0.00000 0.00000 1.00000
获取直接链接