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Sc6InGa3

Alexandria ALEX

Alex-ID: agm003576285 · Space group: Cmc2_1 (#36)

Basic Information

Formula
Sc6InGa3
Alex-ID
agm003576285
Elements
3
Sites
20
Space group
Cmc2_1 (#36)
Crystal system
orthorhombic
Volume
446.41
ų
Cell a
6.4561
Å
Cell b
8.5516
Å
Cell c
8.5516
Å
α angle
109.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Sc6InGa3
Sc
12.00 · 60.0%
In
2.00 · 10.0%
Ga
6.00 · 30.0%

Energy & Stability

Energy above hull
0.1890
eV/atom
Formation energy
-0.3378
eV/atom
Corrected total energy
-106.4497
eV
Raw total energy
-106.4497
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0268
eV
DOS at Fermi level
21.4302
Total magnetisation
0.0017
μB

Additional Information

Prototype ID

AB3C6_292_spg36

Decomposition

Sc2In Sc3Ga2 ScIn

Computed at

2022-04-01 09:59:41.782788

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003576285).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm003576285
data_agm003576285
_cell_length_a     6.45607
_cell_length_b     8.55159
_cell_length_c     8.55159
_cell_angle_alpha  109.00016
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       446.40777
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sc1 Sc 0.10308 0.75950 0.68809 1.00000
  Sc2 Sc 0.60308 0.68809 0.75950 1.00000
  Sc3 Sc 0.27315 0.52090 0.91223 1.00000
  Sc4 Sc 0.77315 0.91223 0.52090 1.00000
  Sc5 Sc 0.26189 0.96573 0.03427 1.00000
  Sc6 Sc 0.67785 0.30107 0.69893 1.00000
  Sc7 Sc 0.17785 0.69893 0.30107 1.00000
  Sc8 Sc 0.76189 0.03427 0.96573 1.00000
  Sc9 Sc 0.27315 0.08777 0.47910 1.00000
  Sc10 Sc 0.77315 0.47910 0.08777 1.00000
  Sc11 Sc 0.10308 0.31191 0.24050 1.00000
  Sc12 Sc 0.60308 0.24050 0.31191 1.00000
  In1 In 0.07331 0.17938 0.82062 1.00000
  In2 In 0.57331 0.82062 0.17938 1.00000
  Ga1 Ga 0.44382 0.98993 0.72972 1.00000
  Ga2 Ga 0.94382 0.72972 0.98993 1.00000
  Ga3 Ga 0.33222 0.45228 0.54772 1.00000
  Ga4 Ga 0.83222 0.54772 0.45228 1.00000
  Ga5 Ga 0.94382 0.01007 0.27028 1.00000
  Ga6 Ga 0.44382 0.27028 0.01007 1.00000
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