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Pr(Ga3Ni)4

Alexandria ALEX

Alex-ID: agm003590331 · Space group: Im-3 (#204)

Basic Information

Formula
Pr(Ga3Ni)4
Alex-ID
agm003590331
Elements
3
Sites
17
Space group
Im-3 (#204)
Crystal system
cubic
Volume
317.47
ų
Cell a
7.4435
Å
Cell b
7.4435
Å
Cell c
7.4435
Å
α angle
109.47
°
β angle
109.47
°
γ angle
109.47
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Pr(Ga3Ni)4
Pr
1.00 · 5.9%
Ga
12.00 · 70.6%
Ni
4.00 · 23.5%

Energy & Stability

Energy above hull
0.2254
eV/atom
Formation energy
-0.1633
eV/atom
Corrected total energy
-67.0466
eV
Raw total energy
-67.0466
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
11.0739
Total magnetisation
-0.0001
μB

Additional Information

Prototype ID

AB4C12_14_spg204

Decomposition

Ga7Ni3 Pr2Ga12Ni Ga3Ni2

Computed at

2022-04-04 01:43:07.552098

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003590331).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm003590331
data_agm003590331
_cell_length_a     7.44345
_cell_length_b     7.44345
_cell_length_c     7.44345
_cell_angle_alpha  109.47122
_cell_angle_beta   109.47122
_cell_angle_gamma  109.47122
_cell_volume       317.46892
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Pr1 Pr 0.00000 0.00000 0.00000 1.00000
  Ga1 Ga 0.82267 0.33918 0.16185 1.00000
  Ga2 Ga 0.33918 0.51652 0.17733 1.00000
  Ga3 Ga 0.83815 0.17733 0.66082 1.00000
  Ga4 Ga 0.33918 0.16185 0.82267 1.00000
  Ga5 Ga 0.16185 0.82267 0.33918 1.00000
  Ga6 Ga 0.66082 0.48348 0.82267 1.00000
  Ga7 Ga 0.51652 0.17734 0.33918 1.00000
  Ga8 Ga 0.48348 0.82266 0.66082 1.00000
  Ga9 Ga 0.66082 0.83815 0.17733 1.00000
  Ga10 Ga 0.82266 0.66082 0.48348 1.00000
  Ga11 Ga 0.17734 0.33918 0.51652 1.00000
  Ga12 Ga 0.17734 0.66082 0.83815 1.00000
  Ni1 Ni 0.00000 0.50000 0.00000 1.00000
  Ni2 Ni 0.50000 0.00000 0.00000 1.00000
  Ni3 Ni 0.50000 0.50000 0.50000 1.00000
  Ni4 Ni 0.00000 0.00000 0.50000 1.00000
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