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TaNb3Ga

Alexandria ALEX

Alex-ID: agm003709502 · 空间群: C2/c (#15)

基础信息

化学式
TaNb3Ga
Alex-ID
agm003709502
元素数
3
位点数
20
空间群
C2/c (#15)
晶系
monoclinic
体积
361.66
ų
晶胞参数 a
5.4967
Å
晶胞参数 b
8.1892
Å
晶胞参数 c
8.1892
Å
α 角
82.22
°
β 角
96.03
°
γ 角
96.03
°

组成

元素组成(原子分数)
组成信息
化学式
TaNb3Ga
Ta
4.00 · 20.0%
Nb
12.00 · 60.0%
Ga
4.00 · 20.0%

能量与稳定性

凸包上方能量
0.2546
eV/atom
形成能
0.0515
eV/atom
校正后总能量
-179.3355
eV
原始总能量
-179.3355
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0121
eV
费米能级态密度
17.5283
总磁矩
0.0001
μB

其他信息

原型 ID

ABC3_4981_spg15

分解产物

Ta2Nb TaNb4 Nb3Ga2

计算时间

2022-04-15 21:33:33.916793

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003709502).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm003709502
data_agm003709502
_cell_length_a     5.49670
_cell_length_b     8.18917
_cell_length_c     8.18917
_cell_angle_alpha  82.22008
_cell_angle_beta   96.02886
_cell_angle_gamma  96.02886
_cell_volume       361.66314
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ta1 Ta 0.25000 0.06371 0.93629 1.00000
  Ta2 Ta 0.75000 0.93629 0.06371 1.00000
  Ta3 Ta 0.25000 0.80924 0.19076 1.00000
  Ta4 Ta 0.75000 0.19076 0.80924 1.00000
  Nb1 Nb 0.54305 0.33898 0.06725 1.00000
  Nb2 Nb 0.95695 0.93275 0.66102 1.00000
  Nb3 Nb 0.45695 0.66102 0.93275 1.00000
  Nb4 Nb 0.04305 0.06725 0.33898 1.00000
  Nb5 Nb 0.96296 0.66923 0.91410 1.00000
  Nb6 Nb 0.53704 0.08590 0.33077 1.00000
  Nb7 Nb 0.03704 0.33077 0.08590 1.00000
  Nb8 Nb 0.46296 0.91410 0.66923 1.00000
  Nb9 Nb 0.34438 0.47078 0.32926 1.00000
  Nb10 Nb 0.15562 0.67074 0.52922 1.00000
  Nb11 Nb 0.65562 0.52922 0.67074 1.00000
  Nb12 Nb 0.84438 0.32926 0.47078 1.00000
  Ga1 Ga 0.82683 0.58773 0.22284 1.00000
  Ga2 Ga 0.67317 0.77716 0.41227 1.00000
  Ga3 Ga 0.17317 0.41227 0.77716 1.00000
  Ga4 Ga 0.32683 0.22284 0.58773 1.00000
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