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HEAS Data Platform · Materials Science Database

Ga6AgSn

Alexandria ALEX

Alex-ID: agm003774539 · Space group: P4/mmm (#123)

Alexandria Database API

Basic Information

Formula
Ga6AgSn
Alex-ID
agm003774539
Elements
3
Sites
8
Space group
P4/mmm (#123)
Crystal system
tetragonal
Volume
159.41
ų
Cell a
4.0949
Å
Cell b
4.0949
Å
Cell c
9.5068
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ga6AgSn
Ga
6.00 · 75.0%
Ag
1.00 · 12.5%
Sn
1.00 · 12.5%

Energy & Stability

Energy above hull
0.0641
eV/atom
Formation energy
0.0458
eV/atom
Corrected total energy
-24.6639
eV
Raw total energy
-24.6639
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
2.3022
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC6_19_spg123

Decomposition

Ga4Ag3 Ga Sn

Computed at

2022-04-20 01:55:52.354510

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm003774539).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm003774539
data_agm003774539
_cell_length_a     4.09492
_cell_length_b     4.09492
_cell_length_c     9.50677
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       159.41280
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.50000 0.50000 0.00000 1.00000
  Ga2 Ga 0.50000 0.50000 0.50000 1.00000
  Ga3 Ga 0.50000 0.00000 0.26615 1.00000
  Ga4 Ga 0.50000 0.00000 0.73385 1.00000
  Ga5 Ga 0.00000 0.50000 0.26615 1.00000
  Ga6 Ga 0.00000 0.50000 0.73385 1.00000
  Ag1 Ag 0.00000 0.00000 0.50000 1.00000
  Sn1 Sn 0.00000 0.00000 0.00000 1.00000
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