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Th2Si3Ni12Ag

Alexandria ALEX

Alex-ID: agm004496107 · Space group: R-3m (#166)

Basic Information

Formula
Th2Si3Ni12Ag
Alex-ID
agm004496107
Elements
4
Sites
18
Space group
R-3m (#166)
Crystal system
trigonal
Volume
255.09
ų
Cell a
6.3670
Å
Cell b
6.3670
Å
Cell c
6.3670
Å
α angle
84.79
°
β angle
84.79
°
γ angle
84.79
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Th2Si3Ni12Ag
Th
2.00 · 11.1%
Si
3.00 · 16.7%
Ni
12.00 · 66.7%
Ag
1.00 · 5.6%

Energy & Stability

Energy above hull
0.4242
eV/atom
Formation energy
-0.1174
eV/atom
Corrected total energy
-105.4849
eV
Raw total energy
-105.4848
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
13.6547
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3D12_106_spg166

Decomposition

ThSiNi4 ThSi2Ni9 SiNi2 Ag

Computed at

2022-06-21 00:10:15.095466

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004496107).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm004496107
data_agm004496107
_cell_length_a     6.36701
_cell_length_b     6.36701
_cell_length_c     6.36701
_cell_angle_alpha  84.78904
_cell_angle_beta   84.78904
_cell_angle_gamma  84.78904
_cell_volume       255.09271
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.65635 0.65635 0.65635 1.00000
  Th2 Th 0.34365 0.34365 0.34365 1.00000
  Si1 Si 0.50000 0.00000 0.00000 1.00000
  Si2 Si 0.00000 0.50000 0.00000 1.00000
  Si3 Si 0.00000 0.00000 0.50000 1.00000
  Ni1 Ni 0.38281 0.38281 0.90137 1.00000
  Ni2 Ni 0.80928 0.80928 0.31029 1.00000
  Ni3 Ni 0.31029 0.80928 0.80928 1.00000
  Ni4 Ni 0.90137 0.38281 0.38281 1.00000
  Ni5 Ni 0.80928 0.31029 0.80928 1.00000
  Ni6 Ni 0.38281 0.90137 0.38281 1.00000
  Ni7 Ni 0.61719 0.61719 0.09863 1.00000
  Ni8 Ni 0.19072 0.19072 0.68971 1.00000
  Ni9 Ni 0.68971 0.19072 0.19072 1.00000
  Ni10 Ni 0.09863 0.61719 0.61719 1.00000
  Ni11 Ni 0.19072 0.68971 0.19072 1.00000
  Ni12 Ni 0.61719 0.09863 0.61719 1.00000
  Ag1 Ag 0.00000 0.00000 0.00000 1.00000
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