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Th6Si2TeSe3

Alexandria ALEX

Alex-ID: agm004598533 · 空间群: C2/m (#12)

Alexandria Database API

基础信息

化学式
Th6Si2TeSe3
Alex-ID
agm004598533
元素数
4
位点数
12
空间群
C2/m (#12)
晶系
monoclinic
体积
332.45
ų
晶胞参数 a
4.2919
Å
晶胞参数 b
8.5364
Å
晶胞参数 c
9.4989
Å
α 角
101.01
°
β 角
103.06
°
γ 角
90.00
°

组成

元素组成（原子分数）
组成信息
化学式
Th6Si2TeSe3
Th
6.00 · 50.0%
Si
2.00 · 16.7%
Te
1.00 · 8.3%
Se
3.00 · 25.0%

能量与稳定性

凸包上方能量
0.0337
eV/atom
形成能
-1.2129
eV/atom
校正后总能量
-83.5489
eV
原始总能量
-83.5489
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0048
eV
费米能级态密度
8.5611
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C3D6_168_spg12

分解产物

Th8Si3Te4Se Th4SiSe3 Th3SiSe2

计算时间

2022-06-29 17:16:22.121654

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004598533).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm004598533
data_agm004598533
_cell_length_a     4.29194
_cell_length_b     8.53644
_cell_length_c     9.49892
_cell_angle_alpha  101.00682
_cell_angle_beta   103.05683
_cell_angle_gamma  90.00000
_cell_volume       332.44789
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.32519 0.90049 0.65038 1.00000
  Th2 Th 0.67015 0.57500 0.34030 1.00000
  Th3 Th 0.67481 0.09951 0.34962 1.00000
  Th4 Th 0.00670 0.26929 0.01340 1.00000
  Th5 Th 0.99330 0.73071 0.98660 1.00000
  Th6 Th 0.32985 0.42500 0.65970 1.00000
  Si1 Si 0.83207 0.66721 0.66414 1.00000
  Si2 Si 0.16793 0.33279 0.33586 1.00000
  Te1 Te 0.50000 0.00000 0.00000 1.00000
  Se1 Se 0.50000 0.50000 0.00000 1.00000
  Se2 Se 0.83896 0.16700 0.67793 1.00000
  Se3 Se 0.16104 0.83300 0.32207 1.00000
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