Navigation

HEAS Data Platform · Materials Science Database

Th6Si2BiSe3

Alexandria ALEX

Alex-ID: agm004598705 · Space group: C2/m (#12)

Basic Information

Formula
Th6Si2BiSe3
Alex-ID
agm004598705
Elements
4
Sites
12
Space group
C2/m (#12)
Crystal system
monoclinic
Volume
337.90
ų
Cell a
4.3092
Å
Cell b
8.5989
Å
Cell c
9.5512
Å
α angle
101.17
°
β angle
103.04
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Th6Si2BiSe3
Th
6.00 · 50.0%
Si
2.00 · 16.7%
Bi
1.00 · 8.3%
Se
3.00 · 25.0%

Energy & Stability

Energy above hull
0.0418
eV/atom
Formation energy
-1.1178
eV/atom
Corrected total energy
-83.1466
eV
Raw total energy
-83.1466
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
8.6280
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3D6_168_spg12

Decomposition

Th8Si3Se5 Th2SiSe Th5SiBi3 Th3Bi4

Computed at

2022-06-29 17:05:43.705796

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004598705).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm004598705
data_agm004598705
_cell_length_a     4.30916
_cell_length_b     8.59887
_cell_length_c     9.55124
_cell_angle_alpha  101.17142
_cell_angle_beta   103.03706
_cell_angle_gamma  90.00000
_cell_volume       337.90153
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.32401 0.89767 0.64801 1.00000
  Th2 Th 0.67002 0.57544 0.34005 1.00000
  Th3 Th 0.67599 0.10233 0.35199 1.00000
  Th4 Th 0.00775 0.27332 0.01550 1.00000
  Th5 Th 0.99225 0.72668 0.98450 1.00000
  Th6 Th 0.32998 0.42456 0.65995 1.00000
  Si1 Si 0.83151 0.66579 0.66302 1.00000
  Si2 Si 0.16849 0.33421 0.33698 1.00000
  Bi1 Bi 0.50000 0.00000 0.00000 1.00000
  Se1 Se 0.50000 0.50000 0.00000 1.00000
  Se2 Se 0.84023 0.16675 0.68046 1.00000
  Se3 Se 0.15977 0.83325 0.31954 1.00000
Get direct link