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Th8Si3Se4S

Alexandria ALEX

Alex-ID: agm004716618 · Space group: R-3m (#166)

Alexandria Database API

Basic Information

Formula
Th8Si3Se4S
Alex-ID
agm004716618
Elements
4
Sites
16
Space group
R-3m (#166)
Crystal system
trigonal
Volume
425.11
ų
Cell a
8.4245
Å
Cell b
8.4550
Å
Cell c
8.4256
Å
α angle
119.89
°
β angle
120.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Th8Si3Se4S
Th
8.00 · 50.0%
Si
3.00 · 18.8%
Se
4.00 · 25.0%
S
1.00 · 6.3%

Energy & Stability

Energy above hull
0.0001
eV/atom
Formation energy
-1.3611
eV/atom
Corrected total energy
-115.5151
eV
Raw total energy
-114.8516
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0031
eV
DOS at Fermi level
8.9426
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB3C4D8_20_spg12

Decomposition

Th8Si3Se4S

Computed at

2023-02-05 09:55:21.118104

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004716618).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm004716618
data_agm004716618
_cell_length_a     8.42446
_cell_length_b     8.45496
_cell_length_c     8.42557
_cell_angle_alpha  119.88745
_cell_angle_beta   119.99563
_cell_angle_gamma  90.00000
_cell_volume       425.11221
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.24379 0.73293 0.98916 1.00000
  Th2 Th 0.24391 0.73307 0.48782 1.00000
  Th3 Th 0.25512 0.26536 0.51024 1.00000
  Th4 Th 0.74537 0.73293 0.98916 1.00000
  Th5 Th 0.25463 0.26707 0.01084 1.00000
  Th6 Th 0.74488 0.73464 0.48976 1.00000
  Th7 Th 0.75609 0.26693 0.51218 1.00000
  Th8 Th 0.75621 0.26707 0.01084 1.00000
  Si1 Si 0.50000 0.50000 0.00000 1.00000
  Si2 Si 0.50000 0.50000 0.50000 1.00000
  Si3 Si 0.00000 0.50000 0.50000 1.00000
  Se1 Se 0.50000 0.00000 0.00000 1.00000
  Se2 Se 0.50000 0.00000 0.50000 1.00000
  Se3 Se 0.00000 0.00000 0.00000 1.00000
  Se4 Se 0.00000 0.00000 0.50000 1.00000
  S1 S 0.00000 0.50000 0.00000 1.00000
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