Dy8Si3AsSe4
Alexandria ALEXAlex-ID: agm004716697 · 空间群: R-3m (#166)
基础信息
组成
能量与稳定性
电子结构
其他信息
AB3C4D8_20_spg12
Dy4As3Se Dy3SiSe2 DySi
2022-07-14 08:32:09.383017
引用参考
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004716697).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
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# CIF generated by HEAS from Alexandria entry agm004716697
data_agm004716697
_cell_length_a 8.21582
_cell_length_b 8.25661
_cell_length_c 8.21578
_cell_angle_alpha 119.83745
_cell_angle_beta 120.00014
_cell_angle_gamma 90.00000
_cell_volume 395.04646
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Dy1 Dy 0.24683 0.73532 0.98849 1.00000
Dy2 Dy 0.24689 0.73536 0.49378 1.00000
Dy3 Dy 0.25447 0.26340 0.50894 1.00000
Dy4 Dy 0.74165 0.73532 0.98849 1.00000
Dy5 Dy 0.25835 0.26468 0.01151 1.00000
Dy6 Dy 0.74553 0.73660 0.49106 1.00000
Dy7 Dy 0.75311 0.26464 0.50622 1.00000
Dy8 Dy 0.75317 0.26468 0.01151 1.00000
Si1 Si 0.50000 0.50000 0.00000 1.00000
Si2 Si 0.50000 0.50000 0.50000 1.00000
Si3 Si 0.00000 0.50000 0.50000 1.00000
As1 As 0.00000 0.50000 0.00000 1.00000
Se1 Se 0.50000 0.00000 0.00000 1.00000
Se2 Se 0.50000 0.00000 0.50000 1.00000
Se3 Se 0.00000 0.00000 0.00000 1.00000
Se4 Se 0.00000 0.00000 0.50000 1.00000
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