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Tm8GaSe4S3

Alexandria ALEX

Alex-ID: agm004720144 · 空间群: R-3m (#166)

Alexandria Database API

基础信息

化学式
Tm8GaSe4S3
Alex-ID
agm004720144
元素数
4
位点数
16
空间群
R-3m (#166)
晶系
trigonal
体积
355.35
ų
晶胞参数 a
7.9012
Å
晶胞参数 b
8.0006
Å
晶胞参数 c
7.9012
Å
α 角
119.59
°
β 角
120.00
°
γ 角
90.00
°

组成

元素组成（原子分数）
组成信息
化学式
Tm8GaSe4S3
Tm
8.00 · 50.0%
Ga
1.00 · 6.3%
Se
4.00 · 25.0%
S
3.00 · 18.8%

能量与稳定性

凸包上方能量
0.0197
eV/atom
形成能
-1.7824
eV/atom
校正后总能量
-93.6653
eV
原始总能量
-91.6749
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
5.9503
总磁矩
0.0000
μB

其他信息

原型 ID

AB3C4D8_20_spg12

分解产物

Tm4GaSe3 Tm4GaS3 Tm2SeS

计算时间

2023-02-12 05:14:07.674245

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004720144).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm004720144
data_agm004720144
_cell_length_a     7.90117
_cell_length_b     8.00061
_cell_length_c     7.90124
_cell_angle_alpha  119.59060
_cell_angle_beta   119.99971
_cell_angle_gamma  90.00000
_cell_volume       355.35015
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.24331 0.73093 0.98770 1.00000
  Tm2 Tm 0.24328 0.73088 0.48655 1.00000
  Tm3 Tm 0.25818 0.27446 0.51637 1.00000
  Tm4 Tm 0.74439 0.73093 0.98770 1.00000
  Tm5 Tm 0.25561 0.26907 0.01230 1.00000
  Tm6 Tm 0.74182 0.72554 0.48363 1.00000
  Tm7 Tm 0.75672 0.26912 0.51345 1.00000
  Tm8 Tm 0.75669 0.26907 0.01230 1.00000
  Ga1 Ga 0.00000 0.50000 0.00000 1.00000
  Se1 Se 0.50000 0.00000 0.00000 1.00000
  Se2 Se 0.50000 0.00000 0.50000 1.00000
  Se3 Se 0.00000 0.00000 0.00000 1.00000
  Se4 Se 0.00000 0.00000 0.50000 1.00000
  S1 S 0.50000 0.50000 0.00000 1.00000
  S2 S 0.50000 0.50000 0.50000 1.00000
  S3 S 0.00000 0.50000 0.50000 1.00000
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