Pr8Ga3OsI4
Alexandria ALEXAlex-ID: agm004734945 · 空间群: R-3m (#166)
基础信息
组成
能量与稳定性
电子结构
其他信息
AB3C4D8_65_spg12
Pr3Os PrGa Pr3GaI3 Pr2Os2I
2023-02-03 15:11:58.388148
引用参考
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004734945).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
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# CIF generated by HEAS from Alexandria entry agm004734945
data_agm004734945
_cell_length_a 8.74814
_cell_length_b 9.35858
_cell_length_c 8.75091
_cell_angle_alpha 117.89094
_cell_angle_beta 119.98951
_cell_angle_gamma 90.00000
_cell_volume 522.22964
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Pr1 Pr 0.22317 0.69600 0.97281 1.00000
Pr2 Pr 0.22327 0.69611 0.44655 1.00000
Pr3 Pr 0.26144 0.28431 0.52289 1.00000
Pr4 Pr 0.74964 0.69600 0.97281 1.00000
Pr5 Pr 0.25036 0.30400 0.02719 1.00000
Pr6 Pr 0.73856 0.71569 0.47711 1.00000
Pr7 Pr 0.77673 0.30389 0.55345 1.00000
Pr8 Pr 0.77683 0.30400 0.02719 1.00000
Ga1 Ga 0.50000 0.50000 0.00000 1.00000
Ga2 Ga 0.50000 0.50000 0.50000 1.00000
Ga3 Ga 0.00000 0.50000 0.50000 1.00000
Os1 Os 0.00000 0.50000 0.00000 1.00000
I1 I 0.50000 0.00000 0.00000 1.00000
I2 I 0.50000 0.00000 0.50000 1.00000
I3 I 0.00000 0.00000 0.00000 1.00000
I4 I 0.00000 0.00000 0.50000 1.00000
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