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K2SiSnO4

Alexandria ALEX

Alex-ID: agm004852279 · Space group: Pmmn (#59)

Alexandria Database API

Basic Information

Formula
K2SiSnO4
Alex-ID
agm004852279
Elements
4
Sites
16
Space group
Pmmn (#59)
Crystal system
orthorhombic
Volume
274.10
ų
Cell a
5.7171
Å
Cell b
6.2113
Å
Cell c
7.7188
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
K2SiSnO4
K
4.00 · 25.0%
Si
2.00 · 12.5%
Sn
2.00 · 12.5%
O
8.00 · 50.0%

Energy & Stability

Energy above hull
0.0628
eV/atom
Formation energy
-2.3763
eV/atom
Corrected total energy
-100.9472
eV
Raw total energy
-95.3289
eV

Electronic Structure

Indirect band gap
3.3893
eV
Direct band gap
3.3927
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2D4_361_spg59

Decomposition

K2Sn2O3 K2Si2Sn2O7 K2SiO3

Computed at

2022-07-19 02:59:31.572664

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004852279).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm004852279
data_agm004852279
_cell_length_a     5.71708
_cell_length_b     6.21129
_cell_length_c     7.71876
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       274.09682
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  K1 K 0.49993 0.27181 0.23555 1.00000
  K2 K 0.49993 0.27181 0.76445 1.00000
  K3 K 0.99993 0.72819 0.73555 1.00000
  K4 K 0.99993 0.72819 0.26445 1.00000
  Si1 Si 0.50000 0.85333 0.50000 1.00000
  Si2 Si 1.00000 0.14667 0.00000 1.00000
  Sn1 Sn 0.99986 0.24471 0.50000 1.00000
  Sn2 Sn 0.49986 0.75529 0.00000 1.00000
  O1 O 0.23690 0.98730 0.00000 1.00000
  O2 O 0.73690 0.01270 0.50000 1.00000
  O3 O 0.26402 0.01387 0.50000 1.00000
  O4 O 0.76402 0.98613 0.00000 1.00000
  O5 O 0.49965 0.71275 0.67995 1.00000
  O6 O 0.99965 0.28725 0.17995 1.00000
  O7 O 0.99965 0.28725 0.82005 1.00000
  O8 O 0.49965 0.71275 0.32005 1.00000
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