Tb4GaSe2Cl
Alexandria ALEXAlex-ID: agm004858828 · 空间群: P2/m (#10)
基础信息
组成
能量与稳定性
电子结构
其他信息
ABC2D4_343_spg10
Tb4GaSe3 Tb2Cl3 Tb3Ga2 Tb
2022-07-13 13:27:20.087661
引用参考
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004858828).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
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# CIF generated by HEAS from Alexandria entry agm004858828
data_agm004858828
_cell_length_a 4.06674
_cell_length_b 7.15347
_cell_length_c 7.14068
_cell_angle_alpha 71.15011
_cell_angle_beta 89.99972
_cell_angle_gamma 89.99968
_cell_volume 196.59061
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Tb1 Tb 0.00000 0.75552 0.73138 1.00000
Tb2 Tb 1.00000 0.24448 0.26862 1.00000
Tb3 Tb 0.50000 0.74585 0.25968 1.00000
Tb4 Tb 0.50000 0.25415 0.74032 1.00000
Ga1 Ga 0.00000 0.49999 0.50000 1.00000
Se1 Se 0.00000 0.00000 1.00000 1.00000
Se2 Se 0.50000 0.00000 0.50000 1.00000
Cl1 Cl 0.50000 0.50000 1.00000 1.00000
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