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Th4GaOsS2

Alexandria ALEX

Alex-ID: agm004860146 · Space group: P2/m (#10)

Basic Information

Formula
Th4GaOsS2
Alex-ID
agm004860146
Elements
4
Sites
8
Space group
P2/m (#10)
Crystal system
monoclinic
Volume
207.68
ų
Cell a
4.1498
Å
Cell b
7.2627
Å
Cell c
7.2930
Å
α angle
70.88
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Th4GaOsS2
Th
4.00 · 50.0%
Ga
1.00 · 12.5%
Os
1.00 · 12.5%
S
2.00 · 25.0%

Energy & Stability

Energy above hull
0.1192
eV/atom
Formation energy
-1.1938
eV/atom
Corrected total energy
-61.7538
eV
Raw total energy
-60.4269
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
6.4934
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2D4_343_spg10

Decomposition

Th2GaOs Th7Os3 Th5OsS4 ThGa2

Computed at

2022-07-19 13:35:30.041209

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm004860146).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm004860146
data_agm004860146
_cell_length_a     4.14977
_cell_length_b     7.26273
_cell_length_c     7.29296
_cell_angle_alpha  70.88476
_cell_angle_beta   89.99972
_cell_angle_gamma  89.99968
_cell_volume       207.68077
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.00000 0.73573 0.76602 1.00000
  Th2 Th 1.00000 0.26427 0.23398 1.00000
  Th3 Th 0.50000 0.74719 0.23504 1.00000
  Th4 Th 0.50000 0.25281 0.76496 1.00000
  Ga1 Ga 0.00000 0.49999 0.50000 1.00000
  Os1 Os 0.50000 0.50000 1.00000 1.00000
  S1 S 0.00000 0.00000 1.00000 1.00000
  S2 S 0.50000 0.00000 0.50000 1.00000
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