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Ba2GeBiAs

Alexandria ALEX

Alex-ID: agm005000751 · 空间群: P2_1/m (#11)

基础信息

化学式
Ba2GeBiAs
Alex-ID
agm005000751
元素数
4
位点数
10
空间群
P2_1/m (#11)
晶系
monoclinic
体积
380.30
ų
晶胞参数 a
4.7758
Å
晶胞参数 b
7.9112
Å
晶胞参数 c
10.4624
Å
α 角
105.84
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Ba2GeBiAs
Ba
4.00 · 40.0%
Ge
2.00 · 20.0%
Bi
2.00 · 20.0%
As
2.00 · 20.0%

能量与稳定性

凸包上方能量
0.0455
eV/atom
形成能
-0.7617
eV/atom
校正后总能量
-41.6033
eV
原始总能量
-41.6033
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0612
eV
费米能级态密度
1.7642
总磁矩
0.0000
μB

其他信息

原型 ID

ABCD2_1570_spg11

分解产物

BaGe2 BaBi Ba2Bi3 Ba2GeAs2

计算时间

2022-07-04 07:15:55.906013

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005000751).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005000751
data_agm005000751
_cell_length_a     4.77584
_cell_length_b     7.91124
_cell_length_c     10.46244
_cell_angle_alpha  105.83611
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       380.29713
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.75000 0.75987 0.59424 1.00000
  Ba2 Ba 0.75000 0.76003 0.02078 1.00000
  Ba3 Ba 0.25000 0.24013 0.40576 1.00000
  Ba4 Ba 0.25000 0.23997 0.97922 1.00000
  Ge1 Ge 0.25000 0.52966 0.80307 1.00000
  Ge2 Ge 0.75000 0.47034 0.19693 1.00000
  Bi1 Bi 0.25000 0.66737 0.31077 1.00000
  Bi2 Bi 0.75000 0.33263 0.68923 1.00000
  As1 As 0.25000 0.83952 0.80864 1.00000
  As2 As 0.75000 0.16048 0.19136 1.00000
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