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HoNbSi2Ru

Alexandria ALEX

Alex-ID: agm005018283 · 空间群: I-4m2 (#119)

基础信息

化学式
HoNbSi2Ru
Alex-ID
agm005018283
元素数
4
位点数
5
空间群
I-4m2 (#119)
晶系
tetragonal
体积
88.58
ų
晶胞参数 a
4.0217
Å
晶胞参数 b
4.0217
Å
晶胞参数 c
6.1709
Å
α 角
109.02
°
β 角
109.02
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
HoNbSi2Ru
Ho
1.00 · 20.0%
Nb
1.00 · 20.0%
Si
2.00 · 40.0%
Ru
1.00 · 20.0%

能量与稳定性

凸包上方能量
0.1706
eV/atom
形成能
-0.6741
eV/atom
校正后总能量
-38.1405
eV
原始总能量
-38.1405
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
3.2548
总磁矩
0.0000
μB

其他信息

原型 ID

ABCD2_1563_spg119

分解产物

HoSiRu Ho(SiRu)2 Nb5Si3 Ho2Nb3Si4

计算时间

2022-08-07 16:44:44.663542

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005018283).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005018283
data_agm005018283
_cell_length_a     4.02174
_cell_length_b     4.02174
_cell_length_c     6.17091
_cell_angle_alpha  109.01783
_cell_angle_beta   109.01783
_cell_angle_gamma  90.00000
_cell_volume       88.58023
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.00000 0.00000 0.00000 1.00000
  Nb1 Nb 0.75000 0.25000 0.50000 1.00000
  Si1 Si 0.60868 0.60868 0.21736 1.00000
  Si2 Si 0.39132 0.39132 0.78264 1.00000
  Ru1 Ru 0.25000 0.75000 0.50000 1.00000
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