SmSi2MoOs
Alexandria ALEXAlex-ID: agm005019455 · 空间群: I-4m2 (#119)
基础信息
组成
能量与稳定性
电子结构
其他信息
ABCD2_1563_spg119
SiMo3 Sm2Si4Mo3 Sm(SiOs)2 SmSi
2022-07-05 03:25:22.728156
引用参考
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005019455).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
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# CIF generated by HEAS from Alexandria entry agm005019455
data_agm005019455
_cell_length_a 4.12272
_cell_length_b 4.12272
_cell_length_c 5.97969
_cell_angle_alpha 110.16512
_cell_angle_beta 110.16512
_cell_angle_gamma 90.00000
_cell_volume 88.73963
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Sm1 Sm 0.00000 0.00000 0.00000 1.00000
Si1 Si 0.61960 0.61960 0.23920 1.00000
Si2 Si 0.38040 0.38040 0.76080 1.00000
Mo1 Mo 0.25000 0.75000 0.50000 1.00000
Os1 Os 0.75000 0.25000 0.50000 1.00000
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