HoSi2TcMo
Alexandria ALEXAlex-ID: agm005019481 · Space group: I-4m2 (#119)
Basic Information
Composition
Energy & Stability
Electronic Structure
Additional Information
ABCD2_1563_spg119
SiMo3 Ho2Si4Mo3 Ho2Si2Tc Ho2Si4Tc3
2022-07-05 03:25:39.586067
Citation
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005019481).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}3D Crystal Structure Rendering
Loading 3D structure…
# CIF generated by HEAS from Alexandria entry agm005019481
data_agm005019481
_cell_length_a 4.01543
_cell_length_b 4.01543
_cell_length_c 6.07460
_cell_angle_alpha 109.29972
_cell_angle_beta 109.29972
_cell_angle_gamma 90.00000
_cell_volume 86.58710
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ho1 Ho 0.00000 0.00000 0.00000 1.00000
Si1 Si 0.61231 0.61231 0.22462 1.00000
Si2 Si 0.38769 0.38769 0.77538 1.00000
Tc1 Tc 0.75000 0.25000 0.50000 1.00000
Mo1 Mo 0.25000 0.75000 0.50000 1.00000
