DyReSi2Os
Alexandria ALEXAlex-ID: agm005019727 · Space group: I-4m2 (#119)
Basic Information
Composition
Energy & Stability
Electronic Structure
Additional Information
ABCD2_49_spg119
Dy(Re2Si)2 Dy2Re3Si5 Dy(SiOs)2 Dy2Si2Os
2022-08-04 17:44:54.129363
Citation
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005019727).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}3D Crystal Structure Rendering
Loading 3D structure…
# CIF generated by HEAS from Alexandria entry agm005019727
data_agm005019727
_cell_length_a 4.13965
_cell_length_b 4.13965
_cell_length_c 5.76585
_cell_angle_alpha 111.03757
_cell_angle_beta 111.03757
_cell_angle_gamma 90.00000
_cell_volume 85.12747
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Dy1 Dy 0.00000 0.00000 0.00000 1.00000
Re1 Re 0.25000 0.75000 0.50000 1.00000
Si1 Si 0.62345 0.62345 0.24690 1.00000
Si2 Si 0.37655 0.37655 0.75310 1.00000
Os1 Os 0.75000 0.25000 0.50000 1.00000
