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CePuSi2Tc

Alexandria ALEX

Alex-ID: agm005019919 · Space group: I-4m2 (#119)

Basic Information

Formula
CePuSi2Tc
Alex-ID
agm005019919
Elements
4
Sites
5
Space group
I-4m2 (#119)
Crystal system
tetragonal
Volume
100.25
ų
Cell a
4.0737
Å
Cell b
4.0737
Å
Cell c
6.6928
Å
α angle
107.72
°
β angle
107.72
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
CePuSi2Tc
Ce
1.00 · 20.0%
Pu
1.00 · 20.0%
Si
2.00 · 40.0%
Tc
1.00 · 20.0%

Energy & Stability

Energy above hull
0.1603
eV/atom
Formation energy
-0.4046
eV/atom
Corrected total energy
-43.5009
eV
Raw total energy
-43.5009
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
9.3410
Total magnetisation
5.1232
μB

Additional Information

Prototype ID

ABCD2_1563_spg119

Decomposition

Pu4Si3Tc Ce2Si5Tc3 CeSi CeSiTc

Computed at

2022-07-05 03:43:16.969862

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005019919).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005019919
data_agm005019919
_cell_length_a     4.07369
_cell_length_b     4.07369
_cell_length_c     6.69275
_cell_angle_alpha  107.71821
_cell_angle_beta   107.71821
_cell_angle_gamma  90.00000
_cell_volume       100.25245
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ce1 Ce 0.00000 0.00000 0.00000 1.00000
  Pu1 Pu 0.75000 0.25000 0.50000 1.00000
  Si1 Si 0.59615 0.59615 0.19230 1.00000
  Si2 Si 0.40385 0.40385 0.80770 1.00000
  Tc1 Tc 0.25000 0.75000 0.50000 1.00000
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