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TmSi3NiOs

Alexandria ALEX

Alex-ID: agm005043686 · Space group: Cmcm (#63)

Basic Information

Formula
TmSi3NiOs
Alex-ID
agm005043686
Elements
4
Sites
12
Space group
Cmcm (#63)
Crystal system
orthorhombic
Volume
197.41
ų
Cell a
6.3758
Å
Cell b
5.6503
Å
Cell c
6.1652
Å
α angle
117.27
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
TmSi3NiOs
Tm
2.00 · 16.7%
Si
6.00 · 50.0%
Ni
2.00 · 16.7%
Os
2.00 · 16.7%

Energy & Stability

Energy above hull
0.3735
eV/atom
Formation energy
-0.3504
eV/atom
Corrected total energy
-79.7137
eV
Raw total energy
-79.7137
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
5.1410
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABCD3_367_spg63

Decomposition

Tm2Si5Os3 Tm2Si5Ni2Os Si2Os Tm(SiNi)2

Computed at

2022-07-09 19:12:01.488244

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005043686).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005043686
data_agm005043686
_cell_length_a     6.37579
_cell_length_b     5.65034
_cell_length_c     6.16515
_cell_angle_alpha  117.27412
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       197.40954
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.75000 0.28648 0.57296 1.00000
  Tm2 Tm 0.25000 0.71352 0.42704 1.00000
  Si1 Si 0.25000 0.16602 0.33204 1.00000
  Si2 Si 0.00000 0.27727 0.00000 1.00000
  Si3 Si 0.50000 0.72273 1.00000 1.00000
  Si4 Si 0.50000 0.27727 0.00000 1.00000
  Si5 Si 0.00000 0.72273 1.00000 1.00000
  Si6 Si 0.75000 0.83398 0.66796 1.00000
  Ni1 Ni 0.25000 0.95839 0.91677 1.00000
  Ni2 Ni 0.75000 0.04161 0.08323 1.00000
  Os1 Os 0.25000 0.38196 0.76392 1.00000
  Os2 Os 0.75000 0.61804 0.23608 1.00000
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