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DySi3NiOs

Alexandria ALEX

Alex-ID: agm005043689 · Space group: Cmcm (#63)

Basic Information

Formula
DySi3NiOs
Alex-ID
agm005043689
Elements
4
Sites
12
Space group
Cmcm (#63)
Crystal system
orthorhombic
Volume
203.45
ų
Cell a
6.5393
Å
Cell b
5.6573
Å
Cell c
6.1841
Å
α angle
117.22
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
DySi3NiOs
Dy
2.00 · 16.7%
Si
6.00 · 50.0%
Ni
2.00 · 16.7%
Os
2.00 · 16.7%

Energy & Stability

Energy above hull
0.3674
eV/atom
Formation energy
-0.3653
eV/atom
Corrected total energy
-80.1563
eV
Raw total energy
-80.1563
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
6.6213
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABCD3_367_spg63

Decomposition

Dy2Si5Ni2Os Dy2Si5Os3 Dy2Si4Ni3Os Si2Os

Computed at

2022-07-09 19:29:43.420389

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005043689).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005043689
data_agm005043689
_cell_length_a     6.53930
_cell_length_b     5.65732
_cell_length_c     6.18414
_cell_angle_alpha  117.21980
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       203.44609
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Dy1 Dy 0.75000 0.28316 0.56632 1.00000
  Dy2 Dy 0.25000 0.71684 0.43368 1.00000
  Si1 Si 0.25000 0.17573 0.35146 1.00000
  Si2 Si 0.00000 0.27705 0.00000 1.00000
  Si3 Si 0.50000 0.72295 1.00000 1.00000
  Si4 Si 0.50000 0.27705 0.00000 1.00000
  Si5 Si 0.00000 0.72295 1.00000 1.00000
  Si6 Si 0.75000 0.82427 0.64854 1.00000
  Ni1 Ni 0.25000 0.97491 0.94982 1.00000
  Ni2 Ni 0.75000 0.02509 0.05018 1.00000
  Os1 Os 0.25000 0.38726 0.77452 1.00000
  Os2 Os 0.75000 0.61274 0.22548 1.00000
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