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RbSiPbO4

Alexandria ALEX

Alex-ID: agm005049136 · Space group: P2_1/m (#11)

Basic Information

Formula
RbSiPbO4
Alex-ID
agm005049136
Elements
4
Sites
14
Space group
P2_1/m (#11)
Crystal system
monoclinic
Volume
250.67
ų
Cell a
5.8349
Å
Cell b
5.9505
Å
Cell c
7.6053
Å
α angle
90.00
°
β angle
108.32
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
RbSiPbO4
Rb
2.00 · 14.3%
Si
2.00 · 14.3%
Pb
2.00 · 14.3%
O
8.00 · 57.1%

Energy & Stability

Energy above hull
0.1241
eV/atom
Formation energy
-2.2674
eV/atom
Corrected total energy
-91.6071
eV
Raw total energy
-85.9887
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
5.8269
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABCD4_801_spg11

Decomposition

Rb(PbO2)4 Rb2Si3PbO9 Rb2Si2Pb2O7 Rb4Si3O8

Computed at

2022-07-16 08:24:16.987475

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005049136).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005049136
data_agm005049136
_cell_length_a     5.83488
_cell_length_b     5.95053
_cell_length_c     7.60529
_cell_angle_alpha  90.00000
_cell_angle_beta   108.32214
_cell_angle_gamma  90.00000
_cell_volume       250.67331
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.69147 0.75000 0.93971 1.00000
  Rb2 Rb 0.30853 0.25000 0.06029 1.00000
  Si1 Si 0.25301 0.75000 0.34405 1.00000
  Si2 Si 0.74699 0.25000 0.65595 1.00000
  Pb1 Pb 0.78391 0.75000 0.47343 1.00000
  Pb2 Pb 0.21609 0.25000 0.52657 1.00000
  O1 O 0.93638 0.46861 0.69291 1.00000
  O2 O 0.06362 0.96861 0.30709 1.00000
  O3 O 0.06362 0.53139 0.30709 1.00000
  O4 O 0.93638 0.03139 0.69291 1.00000
  O5 O 0.42512 0.75000 0.20802 1.00000
  O6 O 0.57488 0.25000 0.79198 1.00000
  O7 O 0.43591 0.75000 0.55896 1.00000
  O8 O 0.56409 0.25000 0.44104 1.00000
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