Hf2GaSn
Alexandria ALEXAlex-ID: agm005110185 · Space group: R3m (#160)
Basic Information
Composition
Energy & Stability
Electronic Structure
Additional Information
ABC2_900_spg160
Hf5GaSn3 Hf2Ga3 HfSn2
2022-07-08 07:42:21.570311
Citation
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005110185).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}3D Crystal Structure Rendering
Loading 3D structure…
# CIF generated by HEAS from Alexandria entry agm005110185
data_agm005110185
_cell_length_a 3.21983
_cell_length_b 3.21983
_cell_length_c 9.60484
_cell_angle_alpha 80.18757
_cell_angle_beta 80.18757
_cell_angle_gamma 60.01178
_cell_volume 84.55914
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Hf1 Hf 0.08757 0.08757 0.73462 1.00000
Hf2 Hf 0.24585 0.24585 0.26521 1.00000
Ga1 Ga 0.49990 0.49990 0.50048 1.00000
Sn1 Sn 0.66668 0.66668 0.99968 1.00000
