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Tb2Si2GeRh5

Alexandria ALEX

Alex-ID: agm005129574 · Space group: P4/mbm (#127)

Basic Information

Formula
Tb2Si2GeRh5
Alex-ID
agm005129574
Elements
4
Sites
20
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
329.38
ų
Cell a
3.4819
Å
Cell b
9.7262
Å
Cell c
9.7262
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb2Si2GeRh5
Tb
4.00 · 20.0%
Si
4.00 · 20.0%
Ge
2.00 · 10.0%
Rh
10.00 · 50.0%

Energy & Stability

Energy above hull
0.0923
eV/atom
Formation energy
-0.9026
eV/atom
Corrected total energy
-141.0235
eV
Raw total energy
-141.0235
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
9.7146
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2D5_50_spg127

Decomposition

TbSi2Rh3 Tb3Ge4Rh7 Tb2GeRh3

Computed at

2022-07-15 04:57:20.260324

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005129574).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005129574
data_agm005129574
_cell_length_a     3.48194
_cell_length_b     9.72615
_cell_length_c     9.72615
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       329.38433
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.00000 0.67549 0.17549 1.00000
  Tb2 Tb 0.00000 0.32451 0.82451 1.00000
  Tb3 Tb 0.00000 0.17549 0.32451 1.00000
  Tb4 Tb 0.00000 0.82451 0.67549 1.00000
  Si1 Si 0.00000 0.12308 0.62308 1.00000
  Si2 Si 0.00000 0.87692 0.37692 1.00000
  Si3 Si 0.00000 0.62308 0.87692 1.00000
  Si4 Si 0.00000 0.37692 0.12308 1.00000
  Ge1 Ge 0.00000 0.00000 0.00000 1.00000
  Ge2 Ge 0.00000 0.50000 0.50000 1.00000
  Rh1 Rh 0.50000 0.21198 0.06808 1.00000
  Rh2 Rh 0.50000 0.78802 0.93192 1.00000
  Rh3 Rh 0.50000 0.06808 0.78802 1.00000
  Rh4 Rh 0.50000 0.71198 0.43192 1.00000
  Rh5 Rh 0.50000 0.93192 0.21198 1.00000
  Rh6 Rh 0.50000 0.28802 0.56808 1.00000
  Rh7 Rh 0.50000 0.56808 0.71198 1.00000
  Rh8 Rh 0.50000 0.43192 0.28802 1.00000
  Rh9 Rh 0.50000 0.50000 0.00000 1.00000
  Rh10 Rh 0.50000 0.00000 0.50000 1.00000
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