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Be2Ga2SiNi5

Alexandria ALEX

Alex-ID: agm005133095 · Space group: P4/mbm (#127)

Basic Information

Formula
Be2Ga2SiNi5
Alex-ID
agm005133095
Elements
4
Sites
20
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
221.84
ų
Cell a
3.1212
Å
Cell b
8.4306
Å
Cell c
8.4306
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Be2Ga2SiNi5
Be
4.00 · 20.0%
Ga
4.00 · 20.0%
Si
2.00 · 10.0%
Ni
10.00 · 50.0%

Energy & Stability

Energy above hull
0.1584
eV/atom
Formation energy
-0.3160
eV/atom
Corrected total energy
-102.0268
eV
Raw total energy
-102.0268
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
9.8306
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2D5_48_spg127

Decomposition

Be2SiNi3 SiNi2 BeNi Ga3Ni2

Computed at

2022-07-14 15:58:12.178909

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005133095).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005133095
data_agm005133095
_cell_length_a     3.12115
_cell_length_b     8.43060
_cell_length_c     8.43060
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       221.83589
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Be1 Be 0.00000 0.12617 0.62617 1.00000
  Be2 Be 0.00000 0.87383 0.37383 1.00000
  Be3 Be 0.00000 0.62617 0.87383 1.00000
  Be4 Be 0.00000 0.37383 0.12617 1.00000
  Ga1 Ga 0.00000 0.66874 0.16874 1.00000
  Ga2 Ga 0.00000 0.33126 0.83126 1.00000
  Ga3 Ga 0.00000 0.16874 0.33126 1.00000
  Ga4 Ga 0.00000 0.83126 0.66874 1.00000
  Si1 Si 0.00000 0.00000 0.00000 1.00000
  Si2 Si 0.00000 0.50000 0.50000 1.00000
  Ni1 Ni 0.50000 0.19505 0.08599 1.00000
  Ni2 Ni 0.50000 0.80495 0.91401 1.00000
  Ni3 Ni 0.50000 0.08599 0.80495 1.00000
  Ni4 Ni 0.50000 0.69505 0.41401 1.00000
  Ni5 Ni 0.50000 0.91401 0.19505 1.00000
  Ni6 Ni 0.50000 0.30495 0.58599 1.00000
  Ni7 Ni 0.50000 0.58599 0.69505 1.00000
  Ni8 Ni 0.50000 0.41401 0.30495 1.00000
  Ni9 Ni 0.50000 0.50000 0.00000 1.00000
  Ni10 Ni 0.50000 0.00000 0.50000 1.00000
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