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U2NbSi2Os5

Alexandria ALEX

Alex-ID: agm005133636 · Space group: P4/mbm (#127)

Basic Information

Formula
U2NbSi2Os5
Alex-ID
agm005133636
Elements
4
Sites
20
Space group
P4/mbm (#127)
Crystal system
tetragonal
Volume
334.20
ų
Cell a
3.5451
Å
Cell b
9.7094
Å
Cell c
9.7094
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
U2NbSi2Os5
U
4.00 · 20.0%
Nb
2.00 · 10.0%
Si
4.00 · 20.0%
Os
10.00 · 50.0%

Energy & Stability

Energy above hull
0.1965
eV/atom
Formation energy
-0.2156
eV/atom
Corrected total energy
-203.5932
eV
Raw total energy
-203.5932
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
28.1614
Total magnetisation
4.4140
μB

Additional Information

Prototype ID

AB2C2D5_50_spg127

Decomposition

NbSiOs UOs3 U4Si6Os7 U2SiOs3

Computed at

2022-07-15 04:56:14.025975

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005133636).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005133636
data_agm005133636
_cell_length_a     3.54505
_cell_length_b     9.70937
_cell_length_c     9.70937
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       334.19853
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  U1 U 0.00000 0.67755 0.17755 1.00000
  U2 U 0.00000 0.32245 0.82245 1.00000
  U3 U 0.00000 0.17755 0.32245 1.00000
  U4 U 0.00000 0.82245 0.67755 1.00000
  Nb1 Nb 0.00000 0.00000 0.00000 1.00000
  Nb2 Nb 0.00000 0.50000 0.50000 1.00000
  Si1 Si 0.00000 0.12086 0.62086 1.00000
  Si2 Si 0.00000 0.87914 0.37914 1.00000
  Si3 Si 0.00000 0.62086 0.87914 1.00000
  Si4 Si 0.00000 0.37914 0.12086 1.00000
  Os1 Os 0.50000 0.21075 0.07403 1.00000
  Os2 Os 0.50000 0.78925 0.92597 1.00000
  Os3 Os 0.50000 0.07403 0.78925 1.00000
  Os4 Os 0.50000 0.71075 0.42597 1.00000
  Os5 Os 0.50000 0.92597 0.21075 1.00000
  Os6 Os 0.50000 0.28925 0.57403 1.00000
  Os7 Os 0.50000 0.57403 0.71075 1.00000
  Os8 Os 0.50000 0.42597 0.28925 1.00000
  Os9 Os 0.50000 0.50000 0.00000 1.00000
  Os10 Os 0.50000 0.00000 0.50000 1.00000
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